Hitachi, Ltd.

Hitachi Global Storage Technologies Japan, Ltd.

Hitachi Maxell, Limited

Hitachi Global Storage Technologies

Noboru Shimizu

Masahiro Kitada

Hideo Tanabe

Naoki Koyama

Toshio Kobayashi

Isamu Yuito

Ryoichi Nakatani

Hisashi Takano

Masaaki Futamoto

Yoshibumi Matsuda

Mikio Suzuki

Kazuo Shiiki

Kyo Akagi

Takeshi Nakao

Yoshinori Miyamura

Fumio Kugiya

Eijin Moriwaki

Hirotsugu Fukuoka

Takayuki Munemoto

Tokuho Takagaki

Hitoshi Nakamura

Yuzuru Hosoe

Atsushi Kikugawa

Kiwamu Tanahashi

Yukio Honda

Tooru Takeura

Masahide Suenaga

Hiroshi Yamamoto

Tetsuo Kobayashi

Kazuhiro Momata

Yukihisa Tsukada

Hiroshi Yamaguchi

Hiroshi Fukui

Atsushi Nakamura

Moriaki Fuyama

Matahiro Komuro

Hideo Fujiwara

Yohji Maruyama

Yoshihisa Kamo

Masao Mitani

Tomohiro Okada

Katsumi Hoshino

Takashi Kawabe

Mitsuhiro Kudo

Masaaki Sano

Sadao Hishiyama

Yasutaro Uesaka

Hiroshi Tsuchiya

Masao Katsumata

Miki Hara

Noboru Yoshida

Shigeyoshi Kato

There is provided a perpendicular magnetic recording medium comprising a non-magnetic layer having a face-centered cubic structure, an antiferromagnetic layer provided on the non-magnetic layer, a soft magnetic underlayer provided on the antiferromagnetic layer, and a perpendicular recording layer provided on the soft magnetic underlayer, which magnetic recording medium makes it possible to realize a recording density not less than 50 Gb/inand makes the error rate thereof low while suppressing the spike noise.

Perpendicular magnetic recording media

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect

Method for manufacturing magnetic head device

Provided are a double-layer perpendicular magnetic recording medium having a high medium S/N at an areal recording density of 50 Gbits or more per square inch, and a magnetic storage apparatus having excellent reliability with a low error rate. The perpendicular magnetic recording medium is formed by sequentially laminating a domain control layer, an amorphous soft magnetic underlayer, an intermediate layer, and a perpendicular recording layer on a substrate. The domain control layer is a triple-layer film formed by laminating a first polycrystalline soft magnetic layer, a disordered antiferromagnetic layer, and a second polycrystalline soft magnetic layer from a substrate side.

Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same

There is provided a perpendicular magnetic recording medium comprising a non-magnetic layer having a face-centered cubic structure, an antiferromagnetic layer provided on the non-magnetic layer, a soft magnetic underlayer provided on the antiferromagnetic layer, and a perpendicular recording layer provided on the soft magnetic underlayer, which magnetic recording medium makes it possible to realize a recording density not less than 50 Gb/in and makes the error rate thereof low while suppressing the spike noise.

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference

Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect

In order to prevent degradation of the recording performance during radio frequency recording, and to provide a thin film magnetic head and a recording reproducing sectional pattern magnetic head which has a magnetic pole width less than 2 .mu.m and an ultra high density magnetic storage apparatus of 10 Gb/ in.sup.2 grade, a recording head is provided in which a lower part magnetic film serves as a shielding film of a reproducing selection, a non magnetic gap film is formed during formation of the upper part magnetic film and the lower part magnetic film, one part of the lower part magnetic film or the upper part magnetic film has a higher resistivity of more than 80 .mu..OMEGA.cm than other parts, the upper part magnetic film is formed by flame galvanizing, and a gap section of the lower part magnetic film or the upper part magnetic film has a convex shape.

Apparatus and thin film magnetic head with magnetic membrane layers of

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Magnetoresistance effect multilayer film with ferromagnetic film

A magnetoresistance effect reproduction head which comprises a magnetoresistive layer having a central sensing region and an end domain control region and formed into a thin film of a ferromagnetic material, a hard magnetic layer overlapping with the end domain control region in direct contact therewith and formed into a thin film of a hard magnetic material, a magnetic field and a longitudinal magnetic bias field by ferromagnetic exchange coupling is generated for maintaining the central sensing region of the magnetoresistive layer in single domain state.

Magnetoresistance effect reproduction head

Multilayer magnetoresistance effect-type magnetic head

In a magnetic head whose recording and reproduction sections are separated, the magnetoresistive element constituting the reproduction head has a structure comprising a soft magnetic film, a spacer metallic film, and a magnetoresistive film and uses a high-performance soft magnetic film whose composition is Ni--Fe--Ru, Ni--Fe--Ru--M (M: fourth element), Ni--Fe--Ta or Ni--Fe--Ta--M (M: fourth element) and which has low coercivity, low magnetostriction, high specific resistance, high saturation magnetization, low magnetoresistivity and high corrosion resistance, this invention provides a recording-reproduction separation type magnetic head comprising a soft magntic bias film which is high magnetic performance, low production cost, and high corrosion resistance.

Magnetoresistive head

Growing community of inventors

Tokorozawa, Japan

Noboru Shimizu