Sony Corporation

Nec Corporation

The University of Tokyo

Ihi Corporation

Hitachi Cable, Inc.

Kabushiki Kaisha Toshiba

Niles Parts Company, Ltd.

Tokyo Electron Sagami Limited

Noboru Sato

Takeshi Nakamura

Tomiji Tanaka

Michiaki Shimizu

Takeshi Momose

Yukihiro Shimogaki

Yasuyuki Fukushima

Yuichi Funato

Hisashi Kikuchi

Nobuyuki Yamashita

Akihiko Tsuge

Shinji Ito

Yutaka Ishikawa

Mitsuo Kasori

Nobuo Iwase

Takanobu Asano

Susumu Tanaka

Kiyoshi Iyogi

Kazutaka Habu

Hideo Ishida

Masato Ishizaki

Kazuo Shinozaki

Kazuo Anzai

Takashi Sakamaki

Yasutomo Tanaka

Nobuyuki Mizukoshi

Kohei Shima

Kozue Hotozuka

Hidetoshi Sugiura

Sanae Abe

Kozue Akazaki

Kenji Fuchigami

Kenjirou Watanabe

Kazutaka Saitoh

Kazuma Akikubo

Hidetoshi Ota

Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Method of producing a silicon compound material and apparatus for producing a silicon compound material

By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preformaccommodated in a reaction furnacefor film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnaceis used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Method for manufacturing heat-resistant composite material

A termination structure of a cable with a shield layer wherein a part of a jacket of the cable is removed at an end of the cable to expose a part of the shield layer and the exposed part of the shield layer is grounded to a fitting object and the cable is fitted in water-tightness with the fitting object. The termination structure has: a metallic sleeve disposed on the jacket of the cable, the metallic sleeve being covered with the exposed part of the shield layer being folded at an end of the jacket; a cylindrical metal fitting being disposed on the periphery of the folded shield layer and swaged at a fixing section corresponding to the folded shield layer to fix the cable; and a heat-shrinkable tube disposed on the periphery of the cylindrical metal fitting and the jacket.

Termination structure of cable with shield layer

A terminal structure of cable with shield layer has: a metal tube one end of which is inserted between the insulation and the shield layer that are exposed by peeling a jacket of the cable and the other end of which is inserted into a penetrating hole in the attached object; a metal sleeve that is disposed on the shield layer and is fastened to make the one end of the metal tube closely contact the insulation; a heat shrinkage tube that covers the metal tube, the metal sleeve and the jacket and has a hot-melt layer formed at the inside of the heat shrinkage tube; and a shield member that is disposed on the other end of the metal tube such that the shield member closely contacts the wall of the penetrating hole to give a water-tightness therebetween.

Terminal structure of cable with shield layer

A socket for automotive vehicles is provided, in which the number of components and the assembling man-hour is small, and thus the cost is low. A vehicle socket is electrically connected to a power supply with a plug of an appliance for automotive vehicles. The socket is formed of a resinous molded body of near cylindrical shape comprising a flange along an outer periphery of an opening in which the plug is inserted, and terminals molded on the bottom surface by insert molding.

Socket for automotive vehicles

In an ATM cell transmission system having an ATM layer device (,), a data path interface (,) and a plurality of normal PHY (Physical) layer devices (,-,to,-M) according to Utopia Level 2 specification, the ATM layer device (,) comprises: a cell buffer (,); FIFO memories (,-,to,-M) each corresponding to each of the normal PHY layer devices (,-,to,-M); an output controller (,&prime;) for controlling the cell buffer (,) to output an ATM cell to be transmitted through one of the normal PHY layer devices (,-,to,-M) into corresponding one of the FIFO memories (,-,to,-M) on condition that the ATM cell is stored in the cell buffer (,) and the corresponding one of the FIFO memories (,-,to,-M) is not full; and a cell transmission controller (,) for performing polling of the normal PHY layer devices (,-,to,-M), designating a selected PHY layer device among the normal PHY layer devices (,-,to,-M) which have returned the HIGH level of the cell transmission allowance signal (TxClav) to the polling and whereof corresponding FIFO memories (,-,to,-M) are not empty, selecting one of the FIFO memories (,-,to,-M) corresponding to the selected PHY layer device as a next sender of cell data to be transmitted through the data path interface (,), and designating the selected PHY layer device at an end of the current transmission cycle as a next receiver of the cell data.

ATM cell transmission system

In an ATM switch device having a plurality of input ports and a plurality of output ports, a port buffer is arranged for each of the output ports and is given a minimum guaranteed value which represents the minimum number of output cells sent to each output port even when traffic congestion takes place at the other output ports. A total queue monitoring buffer is also arranged to monitor a total number of output cells which is equal to a total sum of the minimum guaranteed values determined for the respective output ports and is counted up only when the counts of the port buffers exceed the minimum guaranteed values. With this structure, it is possible to detect traffic congestion all over the ATM switch device by the total queue monitoring buffer and to assure delivery of the output cells equal to the minimum guaranteed value. Each minimum guaranteed value may be determined for each service class and a multicast cell.

ATM switch device capable of favorably controlling traffic congestion

A plate-like member conveying apparatus includes five holding arms arranged parallel to each other in one direction and capable of supporting wafers, a link mechanism for connecting said holding arms to each other and for, when at least one holding arm is moved in the one direction, moving the remaining holding arms such that the pitch thereamong is equal, and a nut-screw driving mechanism for moving the at least one holding arm in the one direction.

Plate-like member conveying apparatus

An external memory control device which is capable of reducing the time required for processings such as write and read of data for the storage areas of an external memory device, such as a disk, is disclosed. The external memory control device includes a smallest sector number register and a largest sector number register which store the smallest and the largest sector numbers, respectively, within a processing range on a track that is designated by a processing request signal frokm a central processing unit, and a processing range detecting part which detects whether a sector number read from the designated track is within the processing range. In this external memory control device, if the sector number read from the designated track is within the processing range, the processings start from the next sector, so that waiting until the arrival of the smallest sector number is no longer needed, and the time required for processing per track can be reduced.

Disk storage control device including a sector number register and range

A magneto-optical recording medium is disclosed. The medium comprises a substrate and a magnetic layer formed thereon. The magnetic layer has a multi layered structure in which rare earth metal element layers and transition metal layers are alternately superposed with each other, with layer thickness of the order of an atomic layer. The layer thickness of the rare earth metal element is selected not less than 2 .ANG. but less than 6 .ANG..

Magneto-optical recording medium having amorphous artificially layered

An optomagnetic recording medium utilizing both rare earth metals and transition metals in the optomagnetic recording system. From 15 to 35 atomic % of the recording medium on the nonmagnetic base consists of one of the rare earth metals gadolinium (Gd), terbium (Tb) or dysprosium (Dy) with the balance being an alloyed mixture of iron (Fe), cobalt (Co) and germanium (Ge). The optomagnetic recording material of the present invention has an increased phase transition temperature without a rise in its Curie point, and provides satisfactory recording and erasing under temperature conditions up to near the Curie point.

Optomagnetic recording medium

An improved magneto-optical recording medium and a method of making the same, the medium including a substrate base and a magneto-optical recording layer formed on the base and composed of a plurality of layers each of which contains a rare earth metal and a transition metal. The relative concentration ratio between the rare earth metal and the transition metal in the layers varies cyclically in the direction of the thickness of the magneto-optical recording layer. The recording medium is conveniently manufactured by simultaneously depositing the transition metal and the rare earth metal by co-sputtering the two metals on a base and providing relative movement between the base and the metal sources during co-sputtering to produce the multilayer recording structure.

Magneto-optical recording medium and method of making same

A high thermal conductivity circuit substrate is provided comprising a sintered aluminum nitride ceramic substrate consisting essentially of one member selected from the group of yttrium, the rare earth metals and the alkali earth metals and an electrically conductive thick film paste for a conductive layer formed on the substrate.

Circuit substrate having high thermal conductivity

A method for producing a magnetic medium which includes the steps of sputtering a magnetic material containing iron onto a substrate in an atmosphere of argon gas mixed with nitrogen gas and depositing a magnetic film on the substrate. The nitrogen is preferably present in an amount of 10 to 10000 ppm and serves to increase the saturation intensity of magnetization. The preferred version of the method consists in jointly sputtering a rare earth metal and an iron-cobalt.

Method for producing magnetic medium

Magneto-optical recording and reproducing apparatus having a

Growing community of inventors

Tokyo, Japan

Noboru Sato