Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Ridgefield Acuisition

Noboru Satake

Masakazu Kobayashi

Yuki Ozaki

Shunji Kawato

Tatsuro Nagahara

Takashi Sekito

Go Noya

Kazuma Yamamoto

Toshiya Okamura

Masahiro Ishii

Yoshio Nojima

Masahiko Kubo

Hironori Endo

[Problem] To provide a film forming composition curable at low temperature and a film forming method using the same. [Means for Solution] A film forming composition comprising a polysilazane, an organic solvent and aspecific additive, and a film forming method comprising applying it on a substrate and curing. The specific additive is selected from the group consisting of (A) guanidines substituted by a hydrocarbylgroup, (B) crown ether amines containing oxygen and nitrogen as a member thereof, (C) cycloalkanes having an amino-substituted polycyclic structure, (D) oximes substituted by a hydrocarbyl group, and (E) imidazolines.

Film forming composition

[Problem] To provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [Means for Solution] A composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing.

Composition for forming coating film and method for forming coating film using same

[Problem] To provide a film forming composition and a method for preparing a film with which it is possible to form a film having excellent gas barrier performance. [Means for Solution] Disclosed is a film forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a method for preparing a film comprising: coating a substrate with said composition; and exposing the same to light.

Film-forming composition and film-forming method using same

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.

Composition for forming fine resist pattern, and pattern formation method using same

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Kakegawa, Japan

Noboru Satake