Kabushiki Kaisha Toshiba

Noboru Noda

Kazuo Endo

Tatsuro Mitani

An aspect of a semiconductor device includes: a collector layer of first conductive type formed on a semiconductor substrate; a graft base layer of second conductive type formed in a surface region of the collector layer; a first base leading-out region of second conductive type formed on the graft base layer; a second base leading-out region of second conductive type formed on an upper surface and a side surface of the first base leading-out region; a base layer of second conductive type formed on the collector layer; an emitter layer of first conductive type formed in a surface region of the base layer; and an emitter leading-out region formed on the emitter layer.

Semiconductor device and method of manufacturing the same

In a light-frequency transistor a base electrode extends from at lease two portions of a transistor region toward the outside, and the extension portions are connected to each other. Thus, a margin of a current density of a base electrode is not decreased. Moreover, the base electrode extends from at least two portions of the transistor region, and at least one of the two extension portions extends on a resistor layer connected to an emitter electrode and is connected to the other extension portion. For this reason, a collector electrode, the emitter electrode, and the base electrode can be formed at the same time, and a pattern for the base electrode can be easily obtained.

High-frequency semiconductor device

A gate structure of a MOS FET has an oxide layer and an electrode layer sequentially formed on a silicon substrate. In the gate structure, the electrode layer includes a first silicidized high-melting metal layer formed on the oxide layer, a high-melting metal layer formed on the first silicidized high-melting metal layer and a second silicidized high-melting metal layer formed on the high-melting metal layer.

Growing community of inventors

Kawasaki, Japan

Noboru Noda