Ngk Insulators, Inc.

Noboru Nishimura

Yuji Katsuda

Asumi Nagai

Kyohei Atsuji

Hirofumi Yamaguchi

Masashi Goto

Atsushi Watanabe

A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAlOas main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

Stacked structure and semiconductor manufacturing apparatus member

The composite sintered body includes AlO, and MgAlO. The content of AlOin the composite sintered body is not less than 95.5% by weight. The average sintered grain size of AlOin the composite sintered body is not less than 2 μm and not greater than 4 μm. The standard deviation of sintered grain size distribution of AlOin the composite sintered body is not greater than 0.35. The bulk density of the composite sintered body is not less than 3.94 g/cmand not greater than 3.98 g/cm. In the composite sintered body, the ratio of amount of crystal phase of MgAlOto that of AlOis not less than 0.003 and not greater than 0.01.

Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 &#x3bc;m or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

A sintered compact includes an alumina phase as a primary phase, and further includes an amorphous phase containing Si and Mn and a cordierite phase. The sintered compact has a porosity of higher than or equal to 1.1% and less than or equal to 5.0%. Preferably, I1/(I1+I2) is greater than or equal to 0.20 and less than or equal to 0.45, where I1 is the strength of the main peak of cordierite obtained by an XRD method, and I2 is the strength of the main peak of alumina.

Sintered compact, circuit component, and method of producing sintered compact

The ceramic structureincludes a discoid ceramic baseand an electrodeburied in the ceramic base. The ceramic baseis a sintered body composed principally of alumina or a rare-earth metal oxide and has a thermal expansion coefficient of 7.5 to 9.5 ppm/K over the range of 40&#xb0; C. to 1200&#xb0; C. The electrodeis composed principally of metal ruthenium. The electrodemay be formed in the shape of a sheet. Alternatively, the electrodemay be patterned in the manner of a one-stroke sketch so as to extend over the entire cross section of the ceramic base

Ceramic structure, member for substrate-holding apparatus, and method for producing the ceramic structure

A ceramic structureincludes a heater electrodewithin a disk-shaped AlN ceramic substrate. The heater electrodecontains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |&#x394;CTE| between a thermal expansion coefficient of the AlN ceramic substrateand a thermal expansion coefficient of the heater electrodeat a temperature in the range of 40&#xb0; C. to 1000&#xb0; C. is 0.35 ppm/&#xb0; C. or less.

Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

A member for a semiconductor manufacturing apparatus according to the present invention is a member that is to be joined to an aluminum nitride base member. The member is composed of a composite material including principal constituent phases that are aluminum nitride and a pseudopolymorph of aluminum nitride which includes silicon, aluminum, oxygen, and nitrogen. The pseudopolymorph of aluminum nitride has at least one periodic structure selected from a 27R phase and a 21R phase or an X-ray diffraction peak at least at 2&#x3b8;=59.8&#xb0; to 60.8&#xb0;. The composite material has a thermal conductivity of 50 W/mK or less at room temperature.

Member for semiconductor manufacturing apparatus, method for producing the same, and heater including shaft

A first bonding material composition according to the present invention is a bonding material composition used when aluminum nitride sintered bodies containing a rare-earth metal oxide are bonded to each other, in which the bonding material composition contains, in addition to an O element-containing aluminum nitride raw material, (a) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, or (b) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, and a rare-earth metal oxide.

Bonding material composition, aluminum nitride bonded body, and method for producing the same

A first bonding material composition according to the present invention is a bonding material composition used when aluminum nitride sintered bodies containing a rare-earth metal oxide are bonded to each other, in which the bonding immaterial composition contains, in addition, to an O element-containing aluminum nitride raw material, (a) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, or (b) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, and a rare-earth metal oxide.

A memberfor semiconductor manufacturing equipment includes a base portionand a ceramic memberformed on the base portion. The ceramic memberof the present invention includes a ceramic basecontaining at least one of magnesium oxide, a magnesium oxide solid solution in which a predetermined component is dissolved in magnesium oxide, and zirconium oxide; and an electrodewhich is arranged on part of the ceramic baseand which contains a ruthenium-aluminum alloy as an electrode component. The ceramic memberis a plate-like member and has a structure in which the electrodeis embedded therein. The electrodeis connected to a feeding memberinserted from the underside of the ceramic member. Electric power is supplied from the feeding member

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Nagoya, Japan

Noboru Nishimura