Texas Instruments Corporation

Noboru Nakanishi

Makoto Shibuya

Luu Thanh Nguyen

William David French

Roozbeh Parsa

Will Kiang Wong

Shoichi Iriguchi

A package includes a leadframe having first surface and a second surface opposing the first surface, the leadframe forming a plurality of leads, a first semiconductor die mounted on the first surface of the leadframe and electrically connected to at least one of the plurality of leads, a second semiconductor die mounted on the second surface of the leadframe, wire bonds electrically connecting the second semiconductor die to the leadframe, and mold compound at least partially covering the first semiconductor die, the second semiconductor die and the wire bonds.

Package with dies mounted on opposing surfaces of a leadframe

An integrated circuit ('IC') package comprising an IC die having a top surface and a bottom surface, an elongate member having opposite first and second end portions and a mid portion. The mid portion is positioned proximate the top surface of the IC die. The IC package also includes an encapsulant block having a top surface, a bottom surface and opposite first and second lateral side surfaces. The encapsulant block encapsulates the IC die and the elongate member. Either or both of the first and second end portions of the elongate member are exposed.

Integrated circuit package with sensor and method of making

A optoelectronic package includes an inner package with a dielectric substrate having at least a first dielectric level with a photodetector (PD) die on a die attach area, first routing connecting a first contact to a first external bond pad (FEBP), and second routing connecting a second contact to a second external bond pad (SEBP). An outer package (OP) includes a ceramic substrate including a light source die on a base portion in direct line of sight with the PD including a first electrode and second electrode. A first wire bond connects the FEBP to a first terminal, a second wire bond connects the SEBP to a second terminal, a third wire bond connects the first electrode to a third terminal, and a fourth wire bond connects the second electrode to a fourth terminal.

Optoelectronic package

In one aspect of the present invention, a method of sawing a semiconductor wafer will be described. A semiconductor wafer is positioned in a wafer sawing apparatus that includes a sawing blade and a movable support structure that physically supports the semiconductor wafer. The semiconductor wafer is coupled with the support structure with various layers, including a dicing tape and an anchoring material. The anchoring material and the wafer are cut with the sawing blade. During the cutting operation, the anchoring material reduces backside chipping of the die and eliminates fly-away die. Various aspects of the present invention relate to arrangements and a wafer sawing apparatus that involve the aforementioned sawing method.

Method for reducing backside die damage during die separation process

A method for creating electrical interconnects between a semiconductor die and package. In the preferred embodiment, an insulating material is applied over the die and extends to the substrate contact pads, leaving a portion of each contact pad exposed. Holes are then trimmed through the insulating material, exposing at least a portion of each die bond pad. A conductive material is then applied over the die, flowing into the holes, contacting the die bond pads, and extending out to contact at least a portion of each substrate contact pad. In another preferred embodiment, an electrically conductive bump may be formed on each die bond pad, protruding through said non-conductive material and at least partially through said conductive material. The conductive layer is then laser trimmed, forming conductive patches that serve as electrical interconnects between the die and package substrate.

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Beppu, Japan

Noboru Nakanishi