Seikosha Co., Ltd.

Nippon Precision Circuits Inc.

Noboru Motai

Yoshihisa Ogiwara

Yoshiaki Watanabe

Sakae Tanaka

Yasunari Kanda

Katsuo Shirai

Kazunori Saito

Yaeko Suzuki

Keiko Shibuki

An amorphous silicon thin film transistor includes a gate electrode, an amorphous silicon layer on the gate insulating layer, a drain electrode and a source electrode on the amorphous silicon layer such that a portion of the side of the amorphous silicon layer which faces away from the gate electrode is exposed, and an impurity layer for reducing an off current of the transistor, the impurity layer including an impurity forming an acceptor and which is formed on the exposed portion of the amorphous silicon layer, the amorphous silicon layer being of a first conduction type and the acceptor being of a second different conduction type.

Amorphous silicon thin film transistor

A reverse staggered amorphous-silicon thin film transistor array substrate includes amorphous silicon thin film transistors in an array, gate wirings interconnecting the gate electrodes of the transistors, and source wirings of a transparent conductive layer connecting the source electrodes. An auxiliary source wiring of the material of the source electrodes of said transistors is provided under the source wiring.

Amorphous-silicon thin film transistor array substrate

A method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor, then activating said impurity with an electric field or light energy and doping the activated impurity into said amorphous silicon layer. The gas may be a hydrogen compound and it may include an oxidizing gas.

Amorphous silicon thin film transistor and method of manufacturing the

A light shielding thin film is provided on a light transmitting substrate, and the film is covered by a photoresist. The photoresist is exposed and developed to form a pattern, and the film is etched using the pattern as a mask. The pattern is then exposed through the substrate, using the film as a mask, the pattern then being developed to form a pattern of reduced size. The film is then etched using the reduced size pattern as a mask.

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Tochigi, Japan

Noboru Motai