Shibaura Mechatronics Corporation

Kabushiki Kaisha Tokuda Seisakusho

Kabushiki Kaisha Toshiba

Daihen Corporation

Shibaura Engineering Works Co., Ltd.

Noboru Kuriyama

Kazuhiko Imagawa

Yutaka Yatsu

Miki Mori

Yoshio Kawamata

Takahiro Aizawa

Yoshiki Fukumoto

Hiroaki Oichi

Takashi Fujii

Yuji Yasumoto

Nobuaki Utsunomiya

According to one embodiment, an ultrasonic bonding apparatus includes an ultrasonic transducer, a distal-end tool, an ultrasonic horn and an ultrasonic oscillator. The ultrasonic oscillator includes an oscillation circuit and a control device. The ultrasonic oscillator applies the voltage oscillated by the oscillation circuit to the ultrasonic transducer. The control device is configured to detect a voltage reflection ratio from the voltage and current supplied from the oscillation circuit and to control the frequency of the voltage generated by the oscillation circuit, thereby to minimize the voltage reflection ratio.

Ultrasonic bonding apparatus

In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time Tto the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt-dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped

Method of detecting an arc in a glow-discharge device and apparatus for controlling a high-frequency arc discharge

A discharging power supply including a direct current power supply unit, a control unit for controlling an output of the direct current power supply unit, and a vibrating current generation unit having a capacitance connected in parallel with a pair of outputs from the direct current power supply unit and an inductance connected to at least one of the pair of outputs, wherein the control unit controls the direct current power supply unit so that current outputted from the direct current power supply unit does not exceed a limit current value in at least a portion of a range of voltage that can be outputted from the direct current power supply unit. Thus, regardless of whether the discharge power is set to be high or low, discharge current exceeding the limit characteristic line can be prevented from flowing.

Discharging power source, sputtering power source, and sputtering device

In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time Tto the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt&#x2212;dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped.

A sputtering power-supply unit comprises a voltage generation section which generates a sputtering voltage between a negative electrode output terminal and a positive electrode output terminal, and a circuit section which reduces fluctuation in a sputtering current even if an arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal. Thus, fluctuation in the sputtering current can be reduced even if the arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal.

Sputtering power-supply unit

In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time T1 to the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt&#x2212;dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped.

The present invention is such that, in a circuit for preventing an arc discharge through the application of a reverse voltage pulse, in the case where, after the application of the reverse voltage pulse has been ended, the generation of an arc discharge is detected by an arc discharge detecting means ( ), a reverse voltage generated by a reverse voltage generating means ( ) is applied within 1 to 10 &mgr;s to a sputtering source to lower the probability of generating a continuous arc discharge and, through a diode (D ) connected in series with the sputtering source ( ) and a resistor (r ) connected in parallel with the diode (D ), a current at a time of applying the reverse voltage is restricted, thus lowering a continuous arc discharge resulting from the reverse arc discharge.

Power supply unit for sputtering device

Power supply apparatus for sputtering and a sputtering apparatus using

In a microwave generator apparatus including a magnetron having a filament and an anode and generating a microwave, a filament power source supplies a filament power to the filament of the magnetron, and an anode power source applies an anode voltage between the filament and the anode of the magnetron. Then a parasitic oscillation detecting circuit detects a parasitic oscillation voltage superimposed on the microwave generated by the magnetron, and a filament power controller, in response to the parasitic oscillation voltage detected by the parasitic oscillation detecting circuit, controls the filament power source to control the filament power so that the parasitic oscillation voltage is made smaller.

Microwave generator apparatus comprising controller for automatically

A sputter-etching device has a hollow electrode with an internal space in which gas plasma is formed and an opening which is confronted with the inner wall of a vacuum chamber to provide an electric discharge gap therebetween. An object to be processed is placed on the side of the vacuum chamber instead of the side of the electrode. The sputter-etching device is combined with a sputtering device so that immediately after being cleaned by sputter-etching, the object is subjected to sputtering.

Sputter-etching device

The sputtering device disclosed herein is based on the fact that the lower the pressure of a gas atmosphere in which glow discharge is effected the smaller the number of chances for metallic atoms emitted from a target or cathode by sputtering to collide with residual molecules between the electrodes is, and the finer the finish of a metallic film formed by depositing the metallic atoms arriving directly to a workpiece is. Also, if the energy of electrons emitted from the target is reduced upon arrival at the anode, the temperature rise inside of the device and especially that of the workpiece can be minimized. The target and the anode are provided in the form of coaxial cylinders, and a magnet is disposed in the target in such a manner that the direction of the magnetic field orthogonally crosses that of the electric field, so that the electro-magnetic force encloses the electrons in an electrode space to increase the density of electrons therein, whereby sputtering is effectively carried out even in a gas atmosphere of extremely low pressure and direct collision of the electrons with the anode is prevented, thereby minimizing the temperature rise of the work-piece.

Growing community of inventors

Yokohama, Japan

Noboru Kuriyama