Sharp Kabushiki Kaisha Corporation

Noboru Iwata

Junji Hirokane

Yoshihiro Ueta

Tazuko Kitazawa

Yoshiteru Murakami

Shinichi Handa

Takanobu Sato

Takayuki Naka

Tadashi Kobashi

Akira Takahashi

Hideharu Tajima

Toshihiko Sakai

Makoto Izumi

Kenichi Yoshimura

Teruhisa Kotani

Masashi Kago

Tetsuya Hayashi

Tomoki Ono

Yasuhiro Harada

Hisayuki Utsumi

Kenji Kimoto

Shintaro Miyanishi

Kazunori Annen

Takashi Arimoto

Tatsuhito Arimura

An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer [[() including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Electroluminescent element and electroluminescent device each having electron transport layer including n-type semiconductor particles and insulating polymer

A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)(LaNiO)(composition formula 1) or (CuO)(LaNiO)(composition formula 2), where 0<x≤1 and 1≤y≤2.

Light-emitting element having a hole transport layer containing LaNiO.sub.3 for luminous efficiency

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

Light-emitting device

A light-emitting element is provided with an anode, a light-emitting layer including quantum dots, and a cathode. The light-emitting element includes: an electron transport layer provided between the cathode and the light-emitting layer; and a hole tunneling insulating layer provided between the anode and the light-emitting layer and in contact with the anode and the light-emitting layer.

Light-emitting element and display device

A light-emitting element () includes: an anode (); a hole transport layer (); a light-emitting layer () containing quantum dots (); an electron transport layer (); and a cathode (), arranged in this order, the light-emitting element further including a charge blocking layer () either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

Light-emitting element and light-emitting device

A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Light-emitting device and method of manufacturing light-emitting device

An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Electroluminescent element and display device

A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Light-emitting element, light-emitting device, and device for producing light-emitting element

A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Light emitting element, light emitting device, and apparatus for producing light emitting element

The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Light-emitting device with high electron injection efficiency

A detection device includes a plurality of detection units formed on a semiconductor circuit, a correction capacitive element that indicates a correction capacitance value for correcting detected capacitance values detected by the detection units, a difference acquisition circuit that acquires a difference value between each of the detected capacitance values and the correction capacitance value, and a conversion circuit that converts the difference value into a digital signal. The correction capacitive element, the difference acquisition circuit, and the conversion circuit are formed on the semiconductor circuit.

Detection device and method of controlling detection device

An optical sensor system includes an optical sensor head having a light-emitting device and a detector which detects light emitted from the light-emitting device, and a calculator circuit. The light-emitting device includes a resonator which includes a first reflective surface, a second reflective surface facing the first reflective surface, and a waveguide provided between the first reflective surface and the second reflective surface. At least one metal microparticle capable of exciting surface plasmon is formed on the first reflective surface. The calculator circuit calculates an environment parameter at the first reflective surface on the basis of a detected value from the detector.

Optical sensor system

The invention intends to accurately measure a concentration of an object. An optical sensor () includes a detection light source () that emits measuring light, a light detection unit () that detects light intensity of the measuring light, which has been changed due to a change in optical characteristics of an object detection member (), and a reference light source () that emits reference light. Light intensity of the reference light is detected by the light detection unit () without being affected by the change in the optical characteristics of the object detection member. The two light sources are arranged under the same environment.

Light intensity detector and detection method

An optical sensor system is provided which can be used not only as an ordinary light source, but also to calculate an environmental parameter. Rear surface outgoing light () output from a rear surface () of a semiconductor laser () is used in a process of calculating an environmental parameter by control and arithmetic device () to, while front surface outgoing light () output from a front surface () is used in an application other than the calculation of the environmental parameter.

Growing community of inventors

Tenri, Japan

Noboru Iwata