Semiconductor Energy Laboratory Co., Ltd.

Noboru Inoue

Shigeru Onoya

Masaaki Hiroki

Eiji Sato

Kei Takahashi

Takahiro Fukutome

A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Solid-state relay and semiconductor device

To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.

Measurement device

A semiconductor display device capable of performing clear display of a high definition image, in which flicker, vertical stripes, horizontal stripes, and diagonal stripes are unlikely to be seen by an observer, is provided. An image signal input from the outside to a RAM of a frame conversion portion in a semiconductor display device is written in, and the written in image signal is read out two times, in order. A period for reading out the image signal input to the RAM one time is shorter than a period for writing in the image signal to the RAM. The electric potentials of display signals input to each pixel in two consecutive frame periods are inverted, with the electric potential of opposing electrodes (opposing electric potential) as a reference, whereby the same image is displayed in a pixel portion in the two consecutive frame periods.

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Kanagawa, Japan

Noboru Inoue