Tokyo Shibaura Electric Co., Ltd.

Noboru Fuse

Kenichi Muramoto

Keizo Tani

Masaaki Iwanishi

A junction type field effect transistor comprises a semiconductor layer of one conductivity type acting as a drain region, a source region of said one conductivity type formed to a prescribed depth from the surface of the semiconductor layer, an insulation layer formed to a prescribed depth from the surface of the semiconductor layer to surround the source region, and a gate region of the opposite conductivity type formed in the proximity of the sorce region. The insulation layer and source region are formed to substantially the same depth.

Junction type field effect transistor with source at oxide-gate

A vertical type junction field effect transistor is disclosed having a body of semiconductor material of a first conductive type, a source region of the first conductive type provided in a main face of the body and a drain region of the first conductive type disposed opposite to the source region. A gate region of a second conductive type opposite to the first conductive type is disposed in direct contact with the source region and surrounds the source region in the form of a closed loop. A channel region extends from the source region towards the drain region and has a varying width in the vicinity of the source region according to the change of a depletion layer upon voltage application to the gate region.

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Hyogo, Japan

Noboru Fuse