Palo Alto Research Center Inc.

Xerox Corporation

Palo Alto Research Corporation Incorporated

Noble Marshall Johnson

Peter Kiesel

Christopher L Chua

Thomas Wunderer

Joerg Martini

Michael Bassler

John E Northrup

Michael A Kneissl

Zhihong Yang

David P Bour

Oliver Schmidt

Bowen Cheng

Markus Beck

Marshall Bern

Michael I Recht

David Kalman Biegelsen

Meng H Lean

Brent Shawhan Krusor

Mark Teepe

Doron Kletter

Ross D Bringans

Andre Strittmatter

Linda T Romano

Patrick Yasuo Maeda

Richard H Bruce

Jack A Walker

Thomas L Paoli

William S Wong

Thomas Hantschel

Alex N Hegyi

Armin Rainer Völkel

Christian G Van De Walle

H Ben Hsieh

Eric Peeters

Eugene Michael Chow

Jeffrey N Roe

David Mathew Johnson

Scott Albert Uhland

Alan G Bell

Werner K Goetz

Martin Sheridan

G A Connell

Qiushu Chen

Jacob N Chamoun

Clifford F Knollenberg

Tim Curley

Fernando A Ponce

Malte Huck

Tobias Buergel

Suk Choi

Norman Nan Shi

David Kirtland Fork

Armin R Volkel

Nicholas K Sheridon

Robert D Burnham

Robert L Thornton

Jeng Ping Lu

Decai Sun

Jengping Lu

Huangpin Ben Hsieh

Sourobh Raychaudhuri

Koenraad F Van Schuylenbergh

Elif Karatay

David W Treat

Richard Kounai Chang

Joseph Zyss

Kevin J Beernink

Anne A Chiang

Daniel Hofstetter

André Strittmatter

A Douglas Stone

Joseph Lee

Chris G Van De Walle

Marvin D Moyer

Dirk J Bartlelink

David K Biegesen

Ali Eshaghian Dorche

Arnd Willy Walter Geis

Grace D Chern

Hakan E Tureci

Rose M Wood

Marshall W Bern

A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.

Polarization controlled transistor

A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

Semiconductor array imager for printing systems

An analyzing system includes a detection area with a transparent window past which an analyte moves and emits or transmits light. One or more polarizing elements receive and polarize the light into respective two or more different polarization components. One or more optical detectors receive the respective two or more polarization components and generate respective at least two signals in response. A processor is coupled to the optical detectors and configured to determine a polarization status of the light from the analyte based on the at least two signals.

Apparatus and method for fluorescence polarization detection

An analyzing system includes a fluidic stream that guides an analyte in a detection area where the analyte emits or transmits light. One or more polarizing elements polarize the light into respective two or more different polarization components. One or more optical detectors receive the respective two or more polarization components and generate respective at least two signals in response. A processor is coupled to the optical detectors and configured to determine the polarization status of the light from the object based on the signals.

An optical device has a first optical layer with a first dispersion response as a first function of wavelength. A second optical layer has a second dispersion response as a function of wavelength that is different than the first function. A separating layer is located between the first and second optical layers and has a lower refractive index than the first layer and the second layer. A thickness of the separating layer is selected such that the first and second dispersion responses combine to create an anomalous dispersion about a target wavelength. The anomalous dispersion results in the optical device emitting a wideband coherent optical output about the target wavelength in response to an optical input at the target wavelength.

Multi-layer optical device exhibiting anomalous dispersion

A system is configured to determine a color distribution of an object moving along a flow direction relative to a spatial filter. The light emanating from the object is time modulated according to the mask features of the spatial filter. First and second detectors are arranged to sense the modulated light. The first detector senses light having a first wavelength spectrum and generates a first electrical output signal in response to the sensed light. The second detector light senses light having a second wavelength spectrum and generates a second electrical output signal in response to the sensed light. Signals from the first and second detectors include information about color distribution of the object.

Determination of color characteristics of objects using spatially modulated light

An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

Electron beam pumped non-c-plane UV emitters

Embodiments are directed to an apparatus that includes a fluidic structure and optical components. The fluidic structure includes a transparent channel through which objects in an analyte fluid can travel along respective paths during operation of the apparatus. The optical components are configured to provide measurement light to the objects traveling through the transparent channel. The fluidic structure is configured to reversibly engage with a host structure. The host structure includes a source of the measurement light and electronics to receive and process output light emanating from the objects traveling in the channel. The fluidic structure makes an air-tight seal when engaged with the host structure.

Fluidic optical cartridge

Spatially modulated light emanating from an object moving along a flow path is used to determine various object characteristics including object length along the flow direction. Light emanating from at least one object moving along in a flow path along a flow direction of a spatial filter is sensed. The intensity of the sensed light is time modulated according to features of the spatial filter. A time varying electrical signal is generated which includes a plurality of pulses in response to the sensed light. Pulse widths of at least some of the pulses are measured at a fraction of a local extremum of the pulses. The length of the object along the flow direction is determined based on the measured pulse widths.

Spatial modulation of light to determine object length

A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlGaN doped with a p-type dopant and AlGaN doped with the p-type dopant, where x&#x2264;x&#x2264;0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

P-side layers for short wavelength light emitters

A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, &#x3bb;, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

Electron beam pumped vertical cavity surface emitting laser

Approaches for determining the delivery success of a particle, such as a drug particle, are disclosed. A system for monitoring delivery of particles to biological tissue includes a volume, an optical component, a detector, and an analyzer. The volume comprises a space through which a particle can pass in a desired direction. The optical component is configured to provide a measurement light. The detector is positioned to detect light emanating from the particle in response to the measurement light. The detected light is modulated as the particle moves along a detection axis. The detector is configured to generate a time-varying signal in response to the detected light. The analyzer is configured to receive the time-varying signal and determine a delivery success of the particle into a biological tissue based upon characteristics of the time-varying signal.

Monitor for particle injector

A nitride heterojunction bipolar transistor with one or more polarization-assisted alloy hole-doped short-period superlattice layers are described herein. The transistor may comprise a substrate, a sub-collector region coupled to the substrate, a collector region coupled to the sub-collector portion, a base portion region to the collector portion, and a short-period superlattice (SPSL) emitter region coupled to the base portion. The SPSL emitter includes a plurality of first emitter layers and a plurality of second emitter layers that are alternating layers that form the SPSL emitter. The first emitter layers have a lower bandgap than the second emitter layers, and the vertical transport through the SPSL emitter region occurs via quantum tunneling. Other embodiments are also described.

Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers

Light emitting devices having an enhanced degree of polarization, P, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, &#x3bb;, and a degree of polarization, P, where P&#x3e;0.006&#x3bb;&#x2212;b for 200 nm&#x2264;&#x3bb;&#x2264;400 nm, wherein b&#x2264;1.5.

Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction

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Menlo Park, CA, United States of America

Noble Marshall Johnson