Applied Materials, Inc.

Nitin Pathak

Amit Kumar Bansal

Tuan Anh Nguyen

Badri N Ramamurthi

Juan Carlos Rocha-Alvarez

Thomas Rubio

Yuxing Zhang

Kartik Bhupendra Shah

Abdul Aziz Khaja

Sarah Michelle Bobek

Saket Rathi

Schubert S Chu

Rui Cheng

Paul Brillhart

Nyi O Myo

Ajit Balakrishna

David T Blahnik

Anzhong Chang

Zhepeng Cong

Vinay K Prabhakar

Zubin Huang

Diwakar N Kedlaya

Kalyanjit Ghosh

Kin Pong Lo

Tejas Ulavi

Edric Tong

Venkata Sharat Chandra Parimi

Richard Omar Collins

Karthik Ramanathan

Juan Carlos Rocha

Kevin Joseph Bautista

Yi Yang

Viren Kalsekar

Manish Hemkar

Anhthu Ngo

Truong Van Nguyen

Dharma Ratnam Srichurnam

Udit S Kotagi

Manjunath Veerappa Chobari Patil

Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

Uniform in situ cleaning and deposition

Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.

Multiple process semiconductor processing system

Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Methods to eliminate of deposition on wafer bevel and backside

The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

Baffle implementation for improving bottom purge gas flow uniformity

The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.

Cleaning assemblies for substrate processing chambers

Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater

A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

Semiconductor processing chambers and methods for cleaning the same

Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

Isolator apparatus and methods for substrate processing chambers

Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

Gas box for CVD chamber

Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Susceptor design to reduce edge thermal peak

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Mumbai, India

Nitin Pathak