Qualcomm Incorporated

Nitin Partani

Ramaprasath Vilangudipitchai

Dorav Kumar

Paras Gupta

Parissa Najdesamii

Mamta Bansal

Uday Doddannagari

A MOS device includes a number of standard cells configured to reduce routing congestions while providing area savings on the MOS device. The standard cells may be single height standard cells that share an n-type well isolated from other nearby n-type wells. The input and output signal pins of the single height standard cells may be configured in a lowest possible metal layer (e.g., M1), while the secondary power pins of the single height standard cells may be configured in a higher metal layer (e.g., M2). Interconnects supplying power to secondary power pins may be configured along vertical tracks and shared among different sets of standard cells, which may reduce the number of vertical tracks used in the MOS device. The number of available horizontal routing tracks in the MOS device may remain unaffected, since the horizontal tracks already used by the primary power/ground mesh are used for power connection.

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Bengaluru, India

Nitin Partani