The Whitaker Corporation

Nitin Jain

Joel Lee Goodrich

Scott Bermingham Doyle

Paul John Schwab

Robert John Sletten

Bernhard Alphonso Ziegner

Matthew F O'Keefe

Graham John Wells

John Stephen Atherton

Donald Cordeiro

Steve Robert Brown

An apparatus for propagating high frequency energy hag a wavelength of .lambda. in a dielectric medium has first and second signal lines, substantially coplanar with each other, and carrying high frequency energy, A ground trace separates the signal lines and has a plurality of vias, each spaced a distance greater than one quarter .lambda. and less than one half .lambda. apart from another one of the vias.

Isolation in multi-layer structures

A transverse electric or quasi-transverse electric mode to rectangular waveguide mode transformer converts an electrical signal propagating in a transmission line from the TE or quasi-TEM transmission mode to a rectangular waveguide transmission mode for propagating in a waveguide. The transformer comprises a trace printed on a substrate, the substrate having first and second major surfaces and first, second, third, and fourth minor surfaces. The transformer is logically divided into a quasi-TEM mode portion, a conversion portion, and a waveguide mode portion. The quasi-TEM mode comprises a length of microstrip. The microstrip widens to a conversion trace in the conversion portion where there is one or more converting fins oriented perpendicularly to the direction of signal propagation. The conversion portion is adjacent the waveguide mode portion comprising metalized first and second major surfaces and third and fourth minor surfaces. The fins direct the quasi-TEM energy into waveguide mode energy in the substrate for propagation through the substrate.

Transverse electric or quasi-transverse electric mode to waveguide mode

A packaged integrated circuit (20, 20a, 20b) which includes at least one waveguide port (44, 44a, 44b) and at least one interconnect (26, 26a, 26b) which is electrically connected to an integrated circuit (30, 30a, 30b).

Millimeter wave module with an interconnect from an interior cavity

It has been identified that a known loss mechanism in the access path to a mesa type device is more significant than previously believed. The source of the loss is due to the electromagnetic interaction of the wire bond and the device side wall which induces an image current at the side wall along the path of the wire bond. According to the teachings of the present invention, a process for forming a conductive coating on a semiconductor device is disclosed. The coating reduces high frequency losses associated with the device. The processes disclosed are compatible with existing semiconductor fabrication devices and advantageously provide improved uniformity and repeatability.

Process for reducing bond resistance in semiconductor devices and

A mixer (1) comprising, an RF port 2 and an LO port (3) supplying two diodes (7), a junction (8) of the diodes (7) referenced to ground (9), and a differential amplifier (19) being supplied with +IF and -IF from outputs of the diodes (7), and the differential amplifier (19) supplying low LO AM noise and low frequency response of an IF port (18) at an output (20) of the differential amplifier.

Growing community of inventors

Nashua, NH, United States of America

Nitin Jain