Globalfoundries U.S. Inc.

Nishtha Gaul

Bipul C Paul

Shashank Nemawarkar

Akhilesh Ramlaut Jaiswal

Ming Yin

The present disclosure relates to memory devices and, more particularly, to bias voltage generation circuit for memory devices and methods of operation. The voltage generation circuit includes: an internal voltage generator which providing a bias voltage to at least one internal node of a bias voltage generation circuitry; and at least one pre-charging circuitry providing a predefined bias voltage to at least one internal node including a distributed network of local drivers.

Bias voltage generation circuit for memory devices

Disclosed is a memory structure with reference-free single-ended sensing. The structure includes an array of non-volatile memory (NVM) cells (e.g., resistance programmable NVM cells) and a sense circuit connected to the array via a data line and a column decoder. The sense circuit includes field effect transistors (FETs) connected in parallel between an output node and a switch and inverters connected between the data line and the gates of the FETs, respectively. To determine the logic value of a stored bit, the inverters are used to detect whether or not a voltage drop occurs on the data line within a predetermined period of time. Using redundant inverters to control redundant FETs connected to the output node increases the likelihood that the occurrence of the voltage drop will be detected and captured at the output node, even in the presence of process and/or thermal variations. Also disclosed is a sensing method.

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Halfmoon, NY, United States of America

Nishtha Gaul