Micron Technology Incorporated

Lodestar Licensing Group LLC

Nirup Bandaru

John David Hopkins

Justin B Dorhout

Nancy M Lomeli

Purnima Narayanan

Jivaan Kishore Jhothiraman

Damir Fazil

Some embodiments include an integrated assembly having a first deck which has first memory cells, and having a second deck which has second memory cells. The first memory cells have first control gate regions which include a first conductive material vertically between horizontally-extending bars of a second conductive material. The second memory cells have second control gate regions which include a fourth conductive material along an outer surface of a third conductive material. A pillar passes through the first and second decks. The pillar includes a dielectric-barrier material laterally surrounding a channel material. The first and fourth materials are directly against the dielectric-barrier material. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies

Integrated assemblies which include stacked memory decks

Methods of forming integrated assemblies include stacked memory decks

Growing community of inventors

Boise, ID, United States of America

Nirup Bandaru