Applied Materials, Inc.

Cabot Corporation

Nirmalya Maity

Hua Chung

Rongjun Wang

Peijun Ding

Mei Yin Chang

Christophe Marcadal

Daniel Clarence Lubben

Ilyoung R Hong

James H Tsung

Roderick Craig Mosely

Jick M Yu

Michael Robert Rice

Seshadri Ganguli

Avi Tepman

Praburam Gopalraja

Samer Banna

Guan Huei See

Hari K Ponnekanti

Aaron Henry Johnson

Omkaram Nalamasu

Ruiping Wang

Sergio Edelstein

Ying W Wang

Gary E Dickerson

Mukhles Sowwan

Debabrata Ghosh

Xundong Dai

Andries J Du Plessis

Ravijit Paintal

Hobart C Kalkstein

John L Dinon

Andries Du Plessis

The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, printed circuit board (PCB) assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a substrate core (e.g., a core structure) is implanted with dopants to achieve a desired bulk resistivity or conductivity. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

Adapting electrical, mechanical, and thermal properties of package substrates

Apparatus for extending substrate queue time for hybrid bonding by preserving plasma activation. In some embodiments, the apparatus may include an environmentally controllable space with a support for holding a die or a substrate, a gas velocity accelerator that recirculates one or more gases laterally across the support, a filter, a humidifier apparatus that is fluidly connected to the environmentally controllable space, wherein the humidifier apparatus enables controllable humidity levels within the environmentally controllable space, a pressurizing apparatus fluidly connected to the humidifier apparatus on an output and fluidly connected to at least one gas supply on an input, a relative humidity (RH) sensor positioned within the environmentally controllable space, and an environment controller in communication with at least the humidifier apparatus and the RH sensor, wherein the environment controller is configured to maintain an RH level of approximately 80% to approximately 95%.

Apparatus for environmental control of dies and substrates for hybrid bonding

The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.

Insulated pipe and method for preparing the same

A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

Integration of ALD tantalum nitride for copper metallization

A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.

Small scanned magentron

In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30&#xb0; C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

Atomic layer deposition of barrier materials

A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.

Ruthenium layer formation for copper film deposition

In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

Atomic layer deposition of tantalum based barrier materials

A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

Magnetron executing planetary motion adjacent a sputtering target

Small planetary magnetron

The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

Alternate steps of IMP and sputtering process to improve sidewall coverage

Growing community of inventors

Los Altos, CA, United States of America

Nirmalya Maity