Maxim Integrated Products, Inc.

Cypress Semiconductor Corporation

Nirmal Ratnakumar

Venkatraman Prabhakar

David Kuan-Yu Liu

Cathal G Phelan

Kenelm G D Murray

A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series with an access PMOS transistor. The memory cells are formed in a common N-Well formed in a P-substrate, the NMOS transistor being formed in a p-doped pocket or base. The program/erase PMOS includes a gate, and first and second P+ doped regions formed in the N-Well, wherein the first P+ region is electrically connected to a corresponding bit line. The access PMOS includes a gate, and first and second P+ regions formed within the N-Well, wherein the first P+ region is electrically connected to the second P+ region of the program/erase PMOS, and the gate is electrically connected to a corresponding word line. The control gate NMOS includes source, drain, and gate, wherein the source and third drain as well as the p-doped pocket are electrically connected to a corresponding control gate line, and the gate is electrically connected to the gate of the program/erase PMOS, forming floating gate of the cell.

EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well

Method of programming a selected memory cell

Method of erasing a block of memory cells

EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well

A non-volatile SRAM cell including (i) a nonvolatile memory element, (ii) a volatile memory element coupled to the nonvolatile memory element and (iii) a gate circuit coupled to the nonvolatile memory element. The gate circuit is configured to transfer data to and from a first input/output line into the volatile memory element.

Non-volatile static memory cell

Growing community of inventors

San Jose, CA, United States of America

Nirmal Ratnakumar