Globalfoundries Inc.

Advanced Micro Devices Corporation

Niraj Subba

Qi Xiang

Zoran Krivokapic

Ming-Ren Lin

Witold P Maszara

Jung-Suk Goo

A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.

Strained fully depleted silicon on insulator semiconductor device

An integrated circuit system includes measuring capacitance for a base structure between a base gate and a base connector thereof, measuring capacitance for a test structure between a test gate and a test connector thereof, the test structure having the test gate, a test dielectric, and the test connector with the test dielectric extending thereunder, and determining a difference between the capacitances of the base structure and the test structure to determine parasitic capacitance for the base structure between the base gate and the base connector thereof.

Integrated circuit system with MOS device

Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

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Sunnyvale, CA, United States of America

Niraj Subba