Micron Technology Incorporated

Niraj B Rana

Kevin R Shea

Prashant Raghu

Janos Fucsko

Kevin J Torek

Zaiyuan Ren

Nishant Sinha

Zhiping Yin

Donald L Yates

Vishwanath Bhat

Anish A Khandekar

Gundu M Sabde

Joseph Neil Greeley

Robert J Hanson

Alex J Schrinsky

Jim J Hofmann

Neil Joseph Greeley

Sandra Tagg

Patrick M Flynn

Pavan Aella

Kyle Grant

Shyam Surthi

Sanjeev Sapra

A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

Methods of forming capacitors

Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

Methods of forming charge storage structures including etching diffused regions to form recesses

Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

Solid state lighting devices and associated methods of manufacturing

A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.

Solutions for cleaning semiconductor structures and related methods

Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally, with an inorganic acid, and a pH of 1 or less.

Highly selective doped oxide etchant

Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 &#x212b;/minute.

Methods for etching doped oxides in the manufacture of microfeature devices

The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1&#xd7;10are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.

Methods of etching oxide, reducing roughness, and forming capacitor constructions

Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

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Boise, ID, United States of America

Niraj B Rana