Technion Research & Development Foundation Limited

Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.

Technion R&d Foundation Ltd.

Nir Tessler

Moti Margalit

Oded Globerman

Roy Shenhar

Michael Greenman

Uri Banin

Yoav Eichen

Ariel Ben-Sasson

Olga Solomeshch

Pramod Kumar

Roy Shehhar

Ariel Jaques Ben Sasson

Ariel Jacques Ben Sasson

Yulia Gerchikov

A transistor structure is configured as a vertical type transistor. The transistor structure has a patterned electrode located between a gate electrode and a channel region of the transistor structure. The patterned electrode has one or more regions of discontinuity of the electrode. The patterned source electrode has at least two layers having at least a first and second barriers for injection of charge carriers into the channel region. The patterned electrode is configured such that a second layer having a second, higher, barrier for injection of charge carriers is configured to provide a physical barrier for flow of charge carriers from the electrode into the channel region.

Electronic device

A transistor device is described, the transistor comprising: a channel region in contact with the gate insulator and source and drain electrodes in contact with the channel region and arranged in a spaced-apart relationship. The channel region is configured with discontinuity in a material path of the channel, located between the source and drain electrodes. The channel being formed by a plurality of discrete semiconductor particles, distributed irregularly within the channel region, and a plurality of electrically conducting particles. The electrically conducting particles connect at least some of said semiconducting particles to one another to provide continuous path for electric coupling between said at least some semiconductor particles, forming an electrical path between the source and drain electrodes.

Field effect transistor device

An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode structure is configured with two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties. The regions of the second group are configured to provide barrier for injection of charge carriers from regions of the first group into the semiconductor element to thereby allow tailoring of desired electronic properties of the device.

An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

Transistor structures and methods of fabrication thereof

An electronic device () is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure () which is enclosed between a dielectric layer () and an active element () of the electronic device (). The electrically-conductive perforated patterned structure () comprises a geometrical pattern defining an array of spaced-apart perforation regions () surrounded by continuous electrically conductive regions (). The pattern is such as to allow the active element () of the electronic device () to be in direct contact with said dielectric layer () aligned with the perforation regions (). A material composition of the device () and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure () and a desired profile of a charge carriers' injection barrier along said structure ().

Vertical organic field effect transistor and method of its manufacture

Methods for producing p-doped organic semiconductor material with a fullerene derivative having at least one electron-withdrawing substituent covalently attached thereto, and semiconductor compositions prepared thereby are provided. Also provided are electronic devices, such as transistors, solar-cells, illuminating devices, OLEDs and detectors, comprised of these p-doped organic semiconductor materials.

Derivatized fullerene-based dopants for organic semiconductors

The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transport to the core of the nanocrystals. The semiconductor nanocrystals emit and/or absorb light in the near infrared spectral range. The nanocrystals cause the composite material to emit/absorb energy in the near infrared (NIR) spectral range, and/or to have a modified dielectric constant, compared to the host material. The invention further comprises electro-optical devices composed of this composite material and a method of producing them. Specifically described are light emitting diodes that emit light in the NIR and photodetectors that absorb light in the same region.

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Zichron Yaakov, Israel

Nir Tessler