Nxp Usa, Inc.

Nxp B.v.

Ning Zhu

Damon G Holmes

Jeffrey Kevin Jones

Jeffrey Spencer Roberts

Ibrahim Khalil

Roy McLaren

Olivier Lembeye

Darrell Glenn Hill

Ramanujam Srinidhi Embar

Michael E Watts

Ricardo Uscola

Muhammad Abduhu Ruhul Hasin

Iouri Volokhine

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element connected between the transistor output terminal and a quasi RF cold point node, a second inductive element connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes a third inductive element, a resistor, and a second capacitance in series between the quasi RF cold point node and the ground reference node and a third capacitance between a baseband termination circuit node and the ground reference node.

T-match topology with baseband termination

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

Broadband power transistor devices and amplifiers with output T-match and harmonic termination circuits and methods of manufacture thereof

A packaged RF amplifier device includes input and output leads and a transistor die. The transistor die includes a transistor with a drain-source capacitance below 0.1 picofarads per watt. The device also includes a conductive connection between the transistor output terminal and the output lead, and a baseband termination circuit between the transistor output terminal and a ground reference node. The baseband termination circuit presents a low impedance to signal energy at envelope frequencies and a high impedance to signal energy at RF frequencies. The baseband termination circuit includes an inductive element, a resistor, and a capacitor connected in series between the transistor output terminal and the ground reference node. Except for a minimal impedance transformation associated with the conductive connection, the device is unmatched between the transistor output terminal and the output lead by being devoid of impedance matching circuitry between the transistor output terminal and the output lead.

Power amplifiers and unmatched power amplifier devices with low baseband impedance terminations

A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x&#x2248;1.5).

RF amplifiers with input-side fractional harmonic resonator circuits

A power transistor die includes a semiconductor die with input and output die sides, and a transistor integrally formed in the semiconductor die between the input die side and the output die side, where the transistor has an input and an output (e.g., a gate and a drain, respectively). The power transistor die also includes an input bondpad and a first output bondpad integrally formed in the semiconductor die between the input die side and the transistor. The input bondpad is electrically connected to the input of the transistor. A conductive structure directly electrically connects the output of the transistor to the first output bondpad. A second output bondpad, which also may be directly electrically connected to the transistor output, may be integrally formed in the semiconductor die between the transistor and the output die side.

Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies

An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.

Symmetric Doherty amplifier with in-package combining node

A semiconductor device includes a transistor die having top and bottom die surfaces, an electrically conductive structure, and input and output pads formed at the top die surface. An isolation structure is interposed between the input and output pads of the transistor die. The isolation structure extends above the top die surface, is coupled to the conductive structure, and is connected to a common return path of the transistor die. The isolation structure may be formed from one or more bondwires and is configured to reduce mutual coupling between input and output interconnects of the semiconductor device.

Semiconductor device with isolation structure

A power amplifier module includes a first phase shifter, a second phase shifter, and an electromagnetic shield. The first phase shifter includes a first transmission line assembly to shift a first amplified signal by a first phase angle. The second phase shifter includes a second transmission line assembly to shift a second amplified signal by a second phase angle. The electromagnetic shield is arranged to shield the first transmission line assembly from the second transmission line assembly. The power amplifier module may have, for example, Doherty amplifier configuration.

Power amplifier with shielded transmission lines

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

High power radio frequency amplifiers and methods of manufacture thereof

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an output impedance matching circuit, and a harmonic termination circuit. The impedance matching circuit includes a harmonic termination circuit, which includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. An equivalent capacitance from a combination of the first inductive element and the first capacitance in series effectively increases the drain-source capacitance by at least 10 percent. The impedance matching circuit also includes a second inductance (a second plurality of bondwires) and a second capacitance coupled in series between the transistor output and the ground reference node, where the second inductance and the second capacitance are directly connected. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.

Broadband power transistor devices and amplifiers and methods of manufacture thereof

Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.

Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.

A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.

RF amplifier output circuit device with integrated current path, and methods of manufacture thereof

A system may include a radio frequency (RF) amplifier device that includes an input impedance matching network and first and second baseband decoupling circuits, which may remove intermodulation distortion products from signal energy input to the RF amplifier device at baseband frequencies. The input impedance matching network may act as a band-pass or low-pass filter. A gate bias voltage may be applied to the gate of a transistor in the RF amplifier device through one of the baseband decoupling circuits or, alternatively, at an input node of the RF amplifier device.

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Chandler, AZ, United States of America

Ning Zhu