Intel Corporation

Ning Wu

Xin Guo

Robert Frickey

Hanmant Pramod Belgal

Shankar Natarajan

Pranav Kalavade

Steven E Wells

Mase J Taub

Andrew W Vogan

Paul D Ruby

Ramkarthik Ganesan

Wei Fang

Robert E Frickey

Ivan Kalastirsky

Neeraj Sharma

Techniques for performing background refresh for storage devices using a timestamp from the host are described. In one example, a method involves receiving a timestamp from a host, storing the timestamp in a storage device, and determining a retention time for data stored in one or more blocks of the storage device based on the timestamp relative to a second timestamp indicating when the data was written to the one or more blocks. In response to determining the retention time exceeds a threshold, the storage device moves the data to one or more other blocks of the storage device, which can include interleaving the refresh writes with activity from the host.

Background data refresh using a system timestamp in storage devices

A non-volatile memory receives a request from a controller to read data stored in the memory. Moving read references are adjusted as a function of the temperature of the memory at which the data was written and the temperature of the memory at which the data is to be read. Moving read references may also be adjusted as a function of the retention time of the data to be read and the word line type of the storage elements in which the data is stored.

Demarcation voltage determination via write and read temperature stamps

Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.

Data recovery in memory devices

An apparatus is described. The apparatus includes a storage device having multiple non volatile memory chips and controller circuitry. The controller circuitry is to implement wear leveling of storage cells of the non volatile memory chips at a granularity of segments of storage cell arrays of the non volatile memory chips that share a same disturber node and that are coupled to a same storage cell array wire to diminish disturb errors.

Word line read disturb error reduction through fine grained access counter mechanism

Technologies for managing an operational characteristic of a solid state drive include monitoring the operational characteristic to determine whether the operational characteristic satisfies a low threshold and a high threshold. If the operational characteristic does satisfy the low threshold, the solid state drive throttles high power memory accesses requests while not throttle low power memory access requests. If the operational characteristic satisfies a high threshold, the solid state drive is configured to throttle all memory accesses. The operational characteristic may be embodied as, for example, a temperature of the solid state drive.

Technologies for managing an operational characteristic of a solid state drive

Embodiments include apparatuses, method, and systems for organizing individual memory dice of a memory device into a plurality of virtual dice and designating one of the virtual dice of the memory device for storage of redundancy information. In one embodiment, a memory controller includes memory allocation logic to organize memory resources of individual memory dice of a memory device into a plurality of virtual dice, including a redundancy virtual die for storing redundancy information and a plurality of data virtual dice for storing data. The memory controller may further include input/output logic to write data to the data virtual dice of the non-volatile memory device, and redundancy information logic to generate redundancy information based on the data and to write the redundancy information to the redundancy virtual die of the non-volatile memory device.

Managing redundancy information in a non-volatile memory

According to one configuration, a memory system includes a configuration manager and multiple memory devices. The configuration manager includes status detection logic, retrieval logic, and configuration management logic. The status detection logic receives notification of a failed attempt by a first memory device to be initialized with custom configuration settings stored in the first memory device. In response to the notification, the retrieval logic retrieves a backup copy of configuration settings information from a second memory device in the memory system. The configuration management logic utilizes the backup copy of the configuration settings information retrieved from the second memory device to initialize the first memory device.

Configuration information backup in memory systems

Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a first threshold when it is identified that the block is a PPB; and when identified otherwise, comparing the read count with a second threshold, wherein the first threshold is smaller than the second threshold. The method further comprises: identifying a block that is a PPB; determining a first word line corresponding to un-programmed page of the PPB; and sending the first word line to the NVM, wherein the NVM to apply: a first read voltage level to word lines corresponding to the un-programmed pages of the PPB, and a second read voltage level to word lines corresponding to programmed pages of the PPB.

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Folsom, CA, United States of America

Ning Wu