Kabushiki Kaisha Toshiba

Ninao Sato

Katsuo Iwata

Kazuhiro Nagata

Takayuki Ogasahara

Shinya Takyu

Toshitsune Iijima

Kenji Takahashi

Kazumasa Tanida

Tetsuya Kurosawa

Masahiro Sekiguchi

Takayuki Ogasahawa

A camera module includes a solid-state image sensing device having a light receiving surface on which a plurality of pixels are provided, and a lens disposed above the solid-state image sensing device and configured to direct light into each of the pixels of the solid-state image sensing device. The lens includes at least one convex portion on a surface facing the light receiving surface of the solid-state image sensing device, and the light receiving surface of the solid-state image sensing device is curved so that chief rays of the light directed by the lens are incident on the respective pixels at substantially the same angles.

Camera module

Certain embodiments provide a solid state imaging device including a plurality of pixels. Each of the pixels has a semiconductor layer which has a charge accumulating layer at a front surface thereof and a filter layer provided above a rear surface of the semiconductor layer. Transmissive wavelength bands of the filter layers included in the pixels are different from each other, and thicknesses which a plurality of the semiconductor layers included in the pixels and including a plurality of the charge accumulating layers have are different from each other.

Solid state imaging device and method for manufacturing solid state imaging device

According to one embodiment, there is provided a solid-state imaging apparatus having an imaging region. In the imaging region, a plurality of pixels are two-dimensionally arranged. The plurality of pixels include a first pixel and a second pixel. The first pixel is arranged near a center of the imaging region. The second pixel is arranged at a position farther away from the center of the imaging region than the first pixel. The first pixel includes a first micro lens having a substantially circular shape as viewed in a plan view. The second pixel includes a second micro lens having a substantially elliptical shape as viewed in a plan view and having an area larger than an area of the first micro lens.

Solid-state imaging apparatus and imaging system

Certain embodiments provide a camera module including a housing of a substantially cuboid shape, a light reflecting portion, a plurality of solid-state imaging device, a lens, and an optical spectroscope. The light reflecting portion is arranged inside the housing and reflects the light incident from the opening portion which is formed on a top surface of the housing, in a direction parallel to a longitudinal direction of the housing. Each of a plurality of solid-state imaging devices has a light receiving surface which is provided in the housing vertically to the bottom surface of the housing. The lens is arranged inside the housing such that an optical axis is parallel to the longitudinal direction of the housing. The optical spectroscope is arranged inside the housing and separates the light which has passed through the lens into lights.

A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.

Semiconductor device and producing method of the same

A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

Method of dividing a semiconductor wafer utilizing a laser dicing technique

A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.

Semiconductor wafer dividing method and apparatus

Semiconductor device obtained by dividing semiconductor wafer by use of laser dicing technique and method of manufacturing the same

A semiconductor device manufacturing apparatus includes a damage forming equipment, dividing equipment and removing equipment. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

Growing community of inventors

Mitaka, Japan

Ninao Sato