Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Nimrod Hermesh

Eran Sharon

Idan Alrod

Julian Vlaiko

Tien-Chien Kuo

Eliran Kanza

Evgeny Vigdorchik

A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to receive a command, such as from a host device, to write data to the memory device, perform toggle mode (TM) encoding on the data, and send the TM encoded data to the memory device. The memory device is configured to receive the TM encoded data, decode the TM encoded data, and write the decoded data to a location within the memory device. The memory device is further configured to receive a read command to read data from a location within the memory device, read the data, TM encode the data, and send the TM encoded data to the controller. The controller is configured to receive and decode the TM encoded data, and send the decoded data to a host device.

Toggle mode (&#x2122;) coding with circuit bounded array memory

A data storage system includes a plurality of memory dies and interface circuitry, including a receiver configured to receive pulses of a read clock signal; an I/O contact pad coupled to the receiver via a signal path of an interface channel; and on-die-termination (ODT) circuitry coupled to the I/O contact pad and the receiver. The ODT circuitry includes a plurality of resistor pairs, each including a pull-up resistor selectively coupled to the signal path via a first switch, and a pull-down resistor selectively coupled to the signal path via a second switch; and ODT control circuitry configured to enable ODT at the interface circuitry by causing each of the switches to be closed during a first stage of the read operation, and disable ODT at the interface circuitry by causing each of the switches to be open during a final stage of the read operation.

Toggle mode frequency optimization by dynamic ODT matching for non-volatile memory

Toggle mode (TM) coding with circuit bounded array memory

An apparatus may include a controller configured to communicate with a plurality of dies via a signal path. The controller may notify the dies of its desire to communicate with a target die. In response, the dies may set on-die termination resistances of two or more of the dies to a low resistance value, which in turn may set an overall termination resistance of the memory dies to be lower than the low resistance value. The lower overall termination resistance may be closer to a characteristic impedance of a portion of the signal path comprising packaging components of a packaging of the dies compared to the low resistance value, thereby reducing impedance mismatch between the characteristic impedance of the packaging components and the termination resistance.

Impedance tuning between packaging and dies

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Mazkeret Batia, Israel

Nimrod Hermesh