Kla-tencor Technologies Corporation

Kla Tencor Corporation

Texas Instruments Corporation

Reflectivity, Inc.

Enki Technology, Inc.

Kla-technologies Corporation

Niles MacDonald

Rudy Flores Garcia

Mehran Nasser-Ghodsi

Ming Lun Yu

Matthew Lent

Kenneth Krzeczowski

Garrett Pickard

Chris Huang

Sergey D Lopatin

Satyadev R Patel

Alexander Jozef Gubbens

Gregory P Schaadt

Doug Keith Masnaghetti

Douglas B MacDonald

Mehran Naser-Ghodsi

Brenor L Brophy

Hongqin Shi

Gabor D Toth

Vinod Nair

Khashayar Shadman

Ye Yang

Stanislaw Marek Borowicz

Tzu-Chin Chuang

Patrick J Neyman

Kevin Kopczynski

Wo-Tak Wu

Ramasubrahmaniam Hanumanthu

Disclosed is a flow coating apparatus, comprising a slot that can dispense a coating material in an approximately uniform manner along a distribution blade that increases uniformity by means of surface tension and transfers the uniform flow of coating material onto an inclined substrate such as for example glass, solar panels, windows or part of an electronic display. Also disclosed is a method of flow coating a substrate using the apparatus such that the substrate is positioned correctly relative to the distribution blade, a pre-wetting step is completed where both the blade and substrate are completed wetted with a pre-wet solution prior to dispensing of the coating material onto the distribution blade from the slot and hence onto the substrate. Thereafter the substrate is removed from the distribution blade and allowed to dry, thereby forming a coating.

Flow coating apparatus and method of coating

Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Structural modification using electron beam activated chemical etch

Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Etch selectivity enhancement in electron beam activated chemical etch

A method of imaging using an electron beam. An incident electron beam is focused onto the specimen surface, a scattered electron beam is extracted from the specimen surface, and a plurality of dark field signals are detected using a detection system. An interpolated dark field signal is generated using the plurality of dark field signals. In addition, a bright field signal may be detected using the detection system, and a final interpolated signal may be generated using the interpolated dark field signal and the bright field signal. User input may be received which determines a degree of interpolation between two adjacent dark field signals so as to generate the interpolated dark field signal and which determines an amount of interpolation between the interpolated dark field signal and the bright field signal so as to generate a final interpolated signal. Other embodiments, aspects and features are also disclosed.

Apparatus and method for e-beam dark imaging with perspective control

A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

Auger electron spectrometer with applied magnetic field at target surface

A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

Transverse magnetic field voltage isolator

Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.

Apparatus and method for detecting an endpoint in a vapor phase etch

Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.

Apparatus and method for flow of process gas in an ultra-clean environment

Growing community of inventors

San Jose, CA, United States of America

Niles MacDonald