Nvidia Corporation

Advanced Micro Devices Corporation

Hewlett Packard Enterprise Development LP

University of Utah Research Foundation

Niladrish Chatterjee

James Michael O'Connor

Nuwan S Jayasena

Gabriel H Loh

Donghyuk Lee

Norman Paul Jouppi

Naveen Muralimanohar

Wishwesh Anil Gandhi

Alan Lynn Davis

Rajeev Balasubramonian

Aniruddha Nagendran Udipi

Gaurav Uttreja

Stephen William Keckler

Daniel Robert Johnson

David Nellans

Evgeny Bolotin

Yaosheng Fu

Zachary Joseph Susskind

Embodiments of the present disclosure relate to memory page access instrumentation for generating a memory access profile. The memory access profile may be used to co-locate data near the processing unit that accesses the data, reducing memory access energy by minimizing distances to access data that is co-located with a different processing unit (i.e., remote data). Execution thread arrays and memory pages for execution of a program are partitioned across multiple processing units. The partitions are then each mapped to a specific processing unit to minimize inter-partition traffic given the processing unit physical topology.

Memory page access instrumentation

A combined on-package and off-package memory system uses a custom base-layer within which are fabricated one or more dedicated interfaces to off-package memories. An on-package processor and on-package memories are also directly coupled to the custom base-layer. The custom base-layer includes memory management logic between the processor and memories (both off and on package) to steer requests. The memories are exposed as a combined memory space having greater bandwidth and capacity compared with either the off-package memories or the on-package memories alone. The memory management logic services requests while maintaining quality of service (QoS) to satisfy bandwidth requirements for each allocation. An allocation may include any combination of the on and/or off package memories. The memory management logic also manages data migration between the on and off package memories.

Combined on-package and off-package memory system

In various embodiments, a parallel processor includes a parallel processor module implemented within a first die and a memory system module implemented within a second die. The memory system module is coupled to the parallel processor module via an on-package link. The parallel processor module includes multiple processor cores and multiple cache memories. The memory system module includes a memory controller for accessing a DRAM. Advantageously, the performance of the parallel processor module can be effectively tailored for memory bandwidth demands that typify one or more application domains via the memory system module.

Techniques for configuring parallel processors for different application domains

A method and system for a DRAM having a first bank that includes a first sub-array (SA) and a second SA. The first SA includes a first storage unit coupled to a first row-buffer in a first sub-channel (FSC) and a second storage unit in a second sub-channel (SSC). The second SA includes a third storage unit and a fourth storage unit coupled to a second row-buffer. The first SA is associated with a first row address (RA) and the FSC is associated with a first column address (CA) stored in the FSC. The second SA is associated with a second RA and the SSC is associated with a second CA stored in the SSC. The first and second CAs are used to select portions of data from the first and second row-buffers, respectively, for output to a data bus.

Systems and methods for dynamic random access memory (DRAM) sub-channels

A die-stacked hybrid memory device implements a first set of one or more memory dies implementing first memory cell circuitry of a first memory architecture type and a second set of one or more memory dies implementing second memory cell circuitry of a second memory architecture type different than the first memory architecture type. The die-stacked hybrid memory device further includes a set of one or more logic dies electrically coupled to the first and second sets of one or more memory dies, the set of one or more logic dies comprising a memory interface and a page migration manager, the memory interface coupleable to a device external to the die-stacked hybrid memory device, and the page migration manager to transfer memory pages between the first set of one or more memory dies and the second set of one or more memory dies.

Page migration in a hybrid memory device

A disclosed example apparatus includes a row address register () to store a row address corresponding to a row () in a memory array (). The example apparatus also includes a row decoder () coupled to the row address register to assert a signal on a wordline () of the row after the memory receives a column address. In addition, the example apparatus includes a column decoder () to selectively activate a portion of the row based on the column address and the signal asserted on the wordline.

Memory access methods and apparatus

Page migration in a 3D stacked hybrid memory

A memory accessing agent includes a memory access generating circuit and a memory controller. The memory access generating circuit is adapted to generate multiple memory accesses in a first ordered arrangement. The memory controller is coupled to the memory access generating circuit and has an output port, for providing the multiple memory accesses to the output port in a second ordered arrangement based on the memory accesses and characteristics of an external memory. The memory controller determines the second ordered arrangement by calculating an efficient row burst value and interrupting multiple row-hit requests to schedule a row-miss request based on the efficient row burst value.

Scheduling memory accesses using an efficient row burst value

An example apparatus includes a row address register to store a row address corresponding to a row in a memory array. The example apparatus also includes a row decoder coupled to the row address register to assert a signal on a wordline of the row after the memory receives a column address. In addition, the example apparatus includes a column decoder to selectively activate a portion of the row based on the column address and the signal asserted on the wordline.

Growing community of inventors

Salt Lake City, UT, United States of America

Niladrish Chatterjee