Corning Incorporated

University-industry Cooperation Group of Kyung Hee University

Nikolay Zhelev Zhelev

Robert George Manley

Karan Mehrotra

Thomas Dale Ketcham

Michael Edward Badding

Mingqian He

Jin Hee Jang

Benedict Yorke Johnson

Rajesh Vaddi

Francis Martin Behan

Bin Zhu

Cheng-Gang Zhuang

Seo-Yeong Cho

Seongho Seok

Barry James Paddock

Xiuling Li

A thin-film transistor (TFT), includes: a substrate (); an organic semiconductor (OSC) layer () positioned on the substrate; a dielectric layer () positioned on the OSC layer; and a polymeric interlayer () disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

Low-voltage operation dual-gate organic thin-film transistors and methods of manufacturing thereof

Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.

Ceramic assembly and method of forming the same

A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

Polar elastomer microstructures and methods for fabricating same

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Painted Post, NY, United States of America

Nikolay Zhelev Zhelev