Georgia State University Research Foundation, Inc.

Xoetronics, LLC

North Carolina State University

The University of North Carolina at Charlotte

Nikolaus Dietz

Klaus J Bachmann

Raphael Tsu

Frank L Madarasz

David Peter Krivoshik

Ian T Ferguson

Amy E Miller

Ian Ferguson

A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.

Incoherent type-III materials for charge carriers control devices

A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith

An optical quantitative detection device comprising: an optical quantitative detection device comprising: a nonlinear/birefringent waveguide sensor with a top surface for interacting with a target molecule, wherein optical excitation of the sensor enables quantitative, spectral discrimination of the target molecule.

Optically confined birefringent chalcopyrite heterostructure devices and operating methods

An optical quantitative detection device comprising: a nonlinear waveguide sensor having a top cladding layer with a top surface for interacting with a target molecule; a second waveguide; a second cladding layer optically coupling the nonlinear waveguide sensor to the second waveguide. Wherein optical excitation of the sensor and optical excitation of the second waveguide enables quantitative discrimination of a target molecule.

Chalcopyrite based nonlinear waveguided heterostructure devices and operating methods

Deposition or etching of a layer on a substrate is monitored by impinging P-polarized light on the layer during deposition at an angle which is approximately the Brewster's angle for the substrate, and detecting radiation which is reflected from the structure during deposition. In heterodeposition, a quarter wavelength interference signal having a predetermined periodicity is monitored. Maxima and/or minima in the quarter wavelength ratio are monitored and an amplitude modulated fine signal which is superimposed on the quarter wavelength interference signal is also monitored. The deposition process is controlled based on the monitored quarter wavelength interference signal, ratio of the maxima and/or minima, fine signal, fine signal amplitude modulation and/or combinations thereof by comparing the signals to a reference derived from mathematical models or empirical data. A heterodeposition or etching can also be used to calibrate a homodeposition or etching. Scattered light may also be correlated to the reflected light to reduce the scattering component of the reflected light.

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Tucker, GA, United States of America

Nikolaus Dietz