Infineon Technologies Ag

Nikolaos Hatzopoulos

Martin Kerber

A method eliminates effects of defects on wafers caused by cavities adjacent to the surface of a semiconductor (e.g., silicon) wafer. A first insulating layer is applied to the surface of the semiconductor wafer and into the cavities adjacent to the surface. The applied first insulating layer is covered with a sacrificial layer. A selective back-etching of the sacrificial layer is carried out, such that the cavities adjacent to the surface remain filled with the sacrificial layer. A second insulating layer is applied directly to the first insulating layer and, in a subsequent method step, a conducting layer is applied to the second insulating layer.

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Dresden, Germany

Nikolaos Hatzopoulos