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Nikolai Georgievich Voronin

Oleg Evgenievich Korobov

Ellin Petrovich Bochkarev

Vadim Nikolaevich Maslov

Ljudvig Alexandrovich Dolomanov

Vladimir Petrovich Kuklev

Eduard Ivanovich Gavrilin

Emilia Stanislavovna Kudeyarova

Jury Vasilievich Jushkov

Vladimir Grigorievich Demyanets

Vladimir Viktorovich Nechaev

Valentin Petrovich Khlebnikov

Jury Anatolievich Drozdov

Grigory Borisovich Goldin

Irina B Nikitina

A method of applying a layer of a source substance over a recipient, consisting in that the substance of the source is converted to gas and then precipitated onto the surface of the recipient, wherein the substance is, according to the invention, applied over at least one intermediate body and then the substance is transferred from the intermediate body onto the recipient.

Method of applying layers of source substance over recipient and device

A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.

Device for epitaxial growing of semiconductor periodic structures from

A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprises a pressure-tight tubular reactor filled with gas and set in a tilted position, an electric motor located outside the reactor and designed to rotate said reactor about its longitudinal axis, at least one group of elements located inside the reactor, comprising a holder of at least two sources of substances of different solid semiconductor materials, which are adjacent to each other, a unit for holding at least one substrate and a device for maintaining a constant clearance between the surfaces of the substrate and the sources, as well as heaters of the sources and the substrate located outside the reactor.

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Moscow, Russia

Nikolai Georgievich Voronin