Micron Technology Incorporated

Aptina Imaging Corporation

Semiconductor Components Industries, LLC

Invisage Technologies, Inc.

Photobit Corporation

Aptima Imaging Corporation

Nikolai E Bock

Alexander I Krymski

Emanuele Mandelli

Barmak Mansoorian

Anders Andersson

David Michael Boisvert

Daniel A Van Blerkom

Taehee Cho

Ashirwad Bahukhandi

Zachary Michael Beiley

Andras Pattantyus-Abraham

Nick Tu

Abraham Kotlyar

Abe Kotlyar

Daniel Van Blerkom

The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Method, apparatus, and system providing an imager with pixels having extended dynamic range

Imaging apparatus () includes a photosensitive medium () configured to convert incident photons into charge carriers. A bias electrode () overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits () are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel () and includes first and second pixel electrodes () coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates () in respective proximity to the first and second pixel electrodes. Circuitry () is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.

Image sensor with phase-sensitive pixels

Imaging apparatus () includes a photosensitive medium () configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits () is formed on a semiconductor substrate (). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode () in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode () in contact with the photosensitive medium at a second location in the pixel. Circuitry () is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.

Image sensor with electron and hole collection electrodes

Imaging apparatus includes a photosensitive medium, which is configured to convert incident photons into charge carriers. An array of three-transistor (3T) pixel circuits, coupled to the photosensitive medium, is arranged in rows and columns on a semiconductor substrate and collects the charge carriers from the photosensitive medium. A readout circuitry includes a plurality of column readout lines; each column readout line is coupled to respective outputs of the pixel circuits in a corresponding column of the array and includes a current source load coupled between a constant-voltage supply and the outputs of the pixel circuits, and a bypass switch in parallel with the current source load. Control circuitry alternately opens the bypass switch on each column readout line during a signal readout phase and closes the bypass switch during a pixel reset phase.

Three-transistor active reset pixel

In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Image sensors with electronic shutter

In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.

Image sensors having extended dynamic range

In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.

Image sensor with high dynamic range and method

An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to perform exponent conversion during a first time period at a nominal reference voltage level and to perform mantissa conversion a subsequent time period at an adjustable reference voltage level that can be less than the nominal reference voltage level. Readout circuitry implemented in this way can perform conversion in a shorter period of time using a reduced resolution ADC to serve effectively as a higher resolution ADC.

Image sensors for generating floating point numbers

An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a floating point number. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in respective shutter tile column memory circuits. A rolling shutter scheme may be implemented to read signals out from the array. Each tile may be allowed to integrate for a different period of time depending on the exponent value stored in the shutter tile column memory circuits. During readout, the signal generated from the ADC circuitry may represent a mantissa value that is combined with the exponent value to yield a floating point number.

Floating point image sensors with different integration times

An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in a tile column memory circuit. During actual readout, the ADC circuitry may be configured to perform mantissa conversion. During mantissa conversion, the ADC circuitry may use a reference voltage value that is adjusted based on the tile data. A mantissa value that is obtained during the mantissa conversion may then be combined with the exponent value for that tile to yield a final floating number point for that image pixel.

Floating point image sensors with tile-based memory

An electronic device may have one or more analog-to-digital converters (ADCs). The ADCs may be used in digitizing signals from an image sensor. In order to ensure that input signals received by an ADC are not clipped, the input signals may be positively or negatively offset by a desired amount. Offsetting the input signals may ensure that the offset input signals wall within the acceptable input range of the ADCs. Offset injection may be accomplished using capacitors that are also used for analog-to-digital conversion. As an example, the ADC may be a successive approximation-type ADC that uses capacitors in a binary search for the digital value most accurately representing an input analog value. The capacitors of the ADC may be used for the successive approximation process and for offset injection. The offset injection may be digitally canceled out following digitization of the input analog signal.

Growing community of inventors

Pasadena, CA, United States of America

Nikolai E Bock