Silex Microsystems Ab

Silex Microsystems Ag

Niklas Svedin

Thorbjörn Ebefors

Edvard Kälvesten

Peter Agren

Anders Eriksson

Edward Kalvesten

Pelle Rangsten

Thomas Ericson

Edward Kälvesten

Peter Ågren

Tommy Schönberg

Hakan Westin

Edward KÄLVESTEN

Håkan Westin

Tommy Huhtaoja

A device includes a base substrate () with a micro component () attached thereto. Suitably it is provided with routing elements () for conducting signals to and from the component (). It also includes spacer members () which also can act as conducting structures for routing signals vertically. There is a capping structure () of a glass material, provided above the base substrate (), bonded via the spacer members (), preferably by eutectic bonding, wherein the capping structure () includes vias () including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

Thin capping for MEMS devices

A method for sealing cavities in micro-electronic/-mechanical system (MEMS) devices to provide a controlled atmosphere within the sealed cavity includes providing a semiconductor substrate on which a template is provided on a localized area of the substrate. The template defines the interior shape of the cavity. Holes are made so as to enable venting of the cavity to provide a desired atmosphere to enter into the cavity through the hole. Finally, a sealing material is provided in the hole to seal the cavity. The sealing can be made by compression and/or melting of the sealing material.

Thin film capping

A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

Via structure and method thereof

A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on the wafers to be sealed off when wafers are bonded together. The material in the strips is a material bonding the semiconductor wafers together and sealing off the monolithically integrated components when subjected to force and optionally heating. A monolithically integrated electrical and/or mechanical and/or fluidic and/or optical device including a first substrate and a second substrate, bonded together with the sealing and bonding structure, and a method of providing a sealing and bonding material structure on at least one of two wafers and applying a force and optionally heat to the wafers to join them are described.

Bonding process and bonded structures

A vent hole precursor structure () in an intermediate product for a semi-conductor device has delicate structures (), and said intermediate product has a cavity () with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer () in which there is formed a depression (). The first wafer is bonded to a second wafer () comprising a device layer () from which the structures () are to be made by etching. A hole or groove () having a predefined depth extends downwards into the device layer, such that the cavity () during etching is opened up before the etching procedure breaks through the device layer () to form the structures ().

The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

Electrical connections in substrates

A method of making a deflectable, free hanging micro structure having at least one hinge member, the method includes the steps of providing a first sacrificial wafer having a single crystalline material constituting material forming the micro structure. A second semiconductor wafer including necessary components for forming the structure in cooperation with the first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of the wafers at selected locations, the finite areas defining points of connection for joining the wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from the sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.

Growing community of inventors

Stockholm, Sweden

Niklas Svedin