Asm International N.v.

Asm Microchemistry Oy

Asm Microchemistry Ltd.

Niklas Bondestam

Pekka T Soininen

Leif Keto

Janne Kes&auml;l&auml;

Sven Lindfors

Tuomo Suntola

Menso Hendriks

Janne Kesälä

The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (), a reaction chamber () with a reaction space into which the substrate can be transferred and which has infeed channels () for feeding therein the reactants used in said thin-film growth process, as well as outlet channels () for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part () mounted stationary in respect to the interior of said vacuum vessel () and a movable part () adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination. The apparatus is intended for use in the fabrication of thin-films by means of the ALE method for semiconductor layer structures and display units.

Apparatus for fabrication of thin films

A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.

Active reactant vapor pulse monitoring in a chemical reactor

The present invention relates to improved methods and apparatus for atomic layer deposition (ALD) of thin films on substrates such as wafers and flat panel displays. The invention provides an ALD reactor comprising a first temperature regulating system to control the temperature of the substrate and a second temperature regulating system to independently control the temperature of the reaction chamber walls. The invention also provides a method for ALD of a film onto a substrate in a reaction chamber, in which the temperature of the substrate is maintained to maximize ALD on the substrate while the temperature of the reaction chamber walls is set to minimize film growth thereon, whether by ALD, condensation, physisorption or thermal decomposition. The temperature of the walls may be maintained at the same temperature as the substrate, or higher or lower than the substrate temperature, depending upon the particular reaction being used.

ALD reactor and method with controlled wall temperature

A method for monitoring the capability of a source container comprising liquid or solid source material to produce vaporized source material comprises extracting vaporized source material from the source container. The source container is then isolated and a property indicative of the partial pressure of the vaporized source material is then measured as a function of time. The partial pressure (or property indicative thereof) as a function of time is compared with a reference partial pressure as a function of time. An alarm is generated when the difference between the measured property (indicative of partial pressure) as a function of time and the reference property value as a function of time is larger than a predetermined property difference limit. The property can be, for example, overall pressure or source material concentration in the gas phase.

Method of monitoring evaporation rate of source material in a container

A method and an apparatus for producing a thin film on a substrate. A substrate is placed in a reaction space and is subjected to alternately repeated surface reactions with at least two different reactants. The reactants are fed in the vapor phase repeatedly and alternately into the reaction space through tree-like piping having a plurality of channels and nozzle orifices, where the nozzle orifices are arranged in a plane perpendicular to the plane of the substrate. The apparatus includes a reaction chamber in which the substrate is placed, inflow piping having a plurality of channels and nozzle orifices, and outlet passages for removing the reaction products and excess reactants. The inflow piping has a tree-like shape and is contained in a plurality of interconnected plates. The nozzle orifices are arranged in an essentially planar fashion in a plane essentially perpendicular to the plane of the substrate.

Method and apparatus for growing thin films

The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel ( ), a reaction chamber ( ) with a reaction space into which the substrate can be transferred and which has infeed channels ( ) for feeding therein the reactants used in said thin film growth process, as well as outlet channels ( ) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part ( ) mounted stationary in respect to the interior of said vacuum vessel ( ) and a movable part ( ) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination. The apparatus is intended for use in the fabrication of thin films by means of the ALE method for semiconductor layer structures and display units.

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Helsinki, Finland

Niklas Bondestam