International Business Machines Corporation

Samsung Electronics Co., Ltd.

Infineon Technologies Ag

Chartered Semiconductor Manufacturing Ltd (Corporation)

Infineon North

Nikki Edleman

Alois Gutmann

Sung-Chul Park

Fang Chen

Byung-Goo Jeon

Richard Stephan Wise

A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

Contact patterning method with transition etch feedback

Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.

Self-limited metal recess for deep trench metal fill

Growing community of inventors

Pawling, NY, United States of America

Nikki Edleman