Applied Materials, Inc.

Nikhil Sudhindrarao Jorapur

Daemian Raj Benjamin Raj

Shailendra Srivastava

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Juan Carlos Rocha-Alvarez

Xinhai Han

Masaki Ogata

Wenjiao Wang

Kristopher R Enslow

Amit Kumar Bansal

Deenesh Padhi

Dmitry A Dzilno

Zheng John Ye

Juan Carlos Rocha

Allison Yau

Ndanka O Mukuti

Abhigyan Keshri

Ganesh Balasubramanian

Tza-Jing Gung

Yue Chen

Jonghoon Baek

Zhijun Jiang

Hidehiro Kojiri

Vu Ngoc Tran Nguyen

Chuan Ying Wang

Arkajit Roy Barman

Syed A Alam

Miguel S Fung

Thian Choi Lim

Zakaria Ibrahimi

Jose Angelo Olave

In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

Dynamic multi zone flow control for a processing system

A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Faceplate having a curved surface

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

Methods and apparatus for controlling RF parameters at multiple frequencies

A fluid delivery device is disclosed. The fluid delivery device includes a fluid flow meter. The fluid flow meter is enclosed in an insulated box. An intake is provided on the insulated box for providing a forced cooling gas flow over the fluid flow meter. An exhaust is provided on the insulated box from which the forced cooling gas exits the insulated box.

Thermally stable flow meters for precision fluid delivery

An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Film stack overlay improvement

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

Growing community of inventors

Sunnyvale, CA, United States of America

Nikhil Sudhindrarao Jorapur