Qualcomm Incorporated

Nikhil Sudhakaran

Praveen Raghuraman

Anand Bhat

Nishi Bhushan Singh

Ashutosh Anand

Shankarnarayan Bhat

Abhinav Kothiala

Madhura Hegde

Sanjay Muchini

Arun Balachandar

Devadatta Bhat

Vaishnavi Sundaralingam

A method and apparatus for repairing a memory is provided. At least one memory is tested using a production test pattern. After the production test, a passing or failing status is determined for each memory tested. This determination may be made using a built-in repair analysis (BIRA) program. After the analysis the location of each failing memory is determined. A fuse register pattern is then determined for the failing memory, and at least one fuse is blown to repair the failed memory. The repair utilizes at least one of the redundant memories present in the semiconductor device. The apparatus includes a semiconductor device having repairable memories, a fuse programmable read-only memory (FPROM) that contains multiple redundant memories, and a fuse box memory repair apparatus that is in communication with the FRPOM and the multiple repairable memories.

Fusebox-based memory repair using redundant memories

Embodiments contained in the disclosure provide a method for memory built-in self-testing (MBIST). The method begins when a testing program is loaded, which may be from an MBIST controller. Once the testing program is loaded MBIST testing begins. During testing, memory failures are determined and written to a failure indicator register. The writing to the failure indicator register occurs in parallel with the ongoing MBIST testing. An apparatus is also provided. The apparatus includes a memory data read/write block, a memory register, a memory addressor, and a memory read/write controller. The apparatus communicates with the memories under test through a memory address and data bus.

Method and apparatus for optimized memory test status detection and debug

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Palakkad, India

Nikhil Sudhakaran