Philips Electronics North America Corporation

Nanocrystal Imaging Corporation

North American Philips Corporation

U.S. Philips Corporation

Other

General Electric Company

Philips Electronics N.a. Corporation

Nikhil R Taskar

Babar Ali Khan

Donald R Dorman

Dennis Gallagher

Rameshwar N Bhargava

Vishal Chhabra

John V Veliadis

Ronald D Pinker

David A Cammack

Piotr M Mensz

Theodore James Letavic

Dev Alok

Vikram Bidare Krishnamurthy

Kevin W Haberern

Samuel P Herko

Bharati S Kulkarni

Aleksey Yekimov

Rameshwar Nath Shargava

Paulette Kellawon

Bharail Kulkarni

Neeta Pandit

Roger Delano

A light emitting device containing an array of directional emission LEDs is provided. The directional emission LEDs of the array may be substrate emitting, lateral current injection, resonant cavity LEDs mounted in a flip-chip configuration. Each LED may emit a different color of light, such that the output of the array appears white to an observer. The LED array package may contain microoptical elements, such as a diffraction grating or microprisms, integrated into the light emitting surface of the package. The microoptical elements are used to mix the light beams emitted by individual LEDs in the array.

Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics

X-ray imaging screens utilizing phosphors disposed in microchannels disposed in a plate. This application relates to the 'tiling' of such microchannel plates to form a larger imaging area and to the use of 'storage phosphors' in the microchannel plates which enables the phosphors to be read out after exposure and from the side exposed to the X-rays. The storage phosphor screens of the present invention provide significantly increased resolution than the prior art storage phosphor screens.

High resolution tiled microchannel storage phosphor based radiation sensor

A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.

High resolution high output microchannel based radiation sensor

A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.

Microchannel high resolution x-ray sensor having an integrated photomultiplier

A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.

Composite nanophosphor screen for detecting radiation having optically reflective coatings

A light-emitting semiconductor device such as a laser or LED includes a light-emitting region interposed between two GaN contact layers of different conductivity types. A metal electrical contact is provided directly on one of the contact layers and is formed of an annealed, at least partly alloyed metal layer including hafnium and gold. The metal layer may also include platinum, or platinum and titanium. Light-emitting semiconductor devices such as light-emitting diodes and lasers having such annealed, at least partly alloyed metal layer are particularly suitable for high current-density applications which result in higher operating temperatures, such they are capable of operating at higher temperatures without shorting.

Metal electrical contact for high current density applications in LED and laser devices

Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.

Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of

A method of forming a laterally-varying charge profile in a silicon carbide substrate includes the steps of forming a silicon nitride layer on a polysilicon layer formed on the silicon carbide substrate, and patterning the silicon nitride layer to provide a plurality of silicon nitrite layer segments which are spaced apart in the lateral direction and which are provided with openings therebetween which are of varying widths. The polysilicon layer is oxidized using the layer segments as an oxidation mask to form a silicon dioxide layer of varying thickness from the polysilicon layer and to form a polysilicon layer portion therebeneath of varying thickness. The silicon dioxide layer and silicon nitride layer segments are removed, and a dopant is ion implanted into the silicon carbide substrate using the polysilicon layer portion of varying thickness as an implantation mask to form a laterally-varying charge profile in the silicon carbide substrate. This method provides an effective and commercially-feasible technique for forming various high-power lateral semiconductor devices, including MOSFET, JFET, diode and IGBT structures, with excellent high-temperature and high-power operating characteristics.

Method of forming a laterally-varying charge profile in silicon carbide

The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Methods of making high voltage GaN-AlN based semiconductor devices and

Methods of making high voltage GaN-A1N based semiconductor devices

A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.

Gas discharge lamps and lasers fabricated by michromachining

Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.

Photo-assisted annealing process for activation of acceptors in

Gas discharge lamps and lasers fabricated by micromachining methodology

The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.

Photo-assisted nitrogen doping of II-VI semiconductor compounds during

A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.

Growing community of inventors

Ossining, NY, United States of America

Nikhil R Taskar