Invensense, Inc.

Bfly Operations, Inc.

Nikhil Apte

Michael Julian Daneman

James Christian Salvia

Julius Ming-Lin Tsai

Michael Henderson Perrott

Renata Melamud Berger

Mei-Lin Chan

Eldwin Ng

Bruno Werner Garlepp

Marian Voros

Chienliu Chang

Jianwei Liu

Bongsang Kim

Lingyun Miao

Sina Akhbari

Leonardo Baldasarre

Xiaoyue Jiang

Emad Mehdizadeh

Victor L Pushparaj

Shreyas Thakar

Lingtao Wang

An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.

Micromachined ultrasound transducer with pedestal

A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

Piezoelectric micromachined ultrasound transducer device with piezoelectric barrier layer

An electronic device includes a substrate layer having a front surface and a back surface opposite the front surface, a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate backward waves during operation, the backward waves propagating through the substrate layer, and a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation.

Reflection minimization for sensor

A piezoelectric micromachined ultrasound transducer (PMUT) array may comprise PMUT devices with respective piezoelectric layers and electrode layers. Parasitic capacitance can be reduced when an electrode layer is not shared across PMUT devices but may expose the devices to electromagnetic interference (EMI). A conductive layer located within the structural layer or on a shared plane with the electrode layers may reduce EMI affecting the PMUT array operation.

EMI reduction in piezoelectric micromachined ultrasound transducer array

A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device is provided. The PMUT includes a substrate and an edge support structure connected to the substrate. A membrane is connected to the edge support structure such that a cavity is defined between the membrane and the substrate, where the membrane configured to allow movement at ultrasonic frequencies. The membrane comprises a piezoelectric layer and first and second electrodes coupled to opposing sides of the piezoelectric layer. For operation in a Capacitive Micromachined Ultrasonic Transducer (CMUT) mode, a third electrode is disposed on the substrate and separated by an air gap in the cavity from the second electrode. Also provided are an integrated MEMS array, a method for operating an array of PMUT/CMUT dual-mode devices, and a PMUT/CMUT dual-mode device.

Supplemental sensor modes and systems for ultrasonic transducers

An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array and a plurality of MEMS devices. Each CMOS control element of the plurality of CMOS control elements includes at least one of a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device. Each MEMS device of the plurality of MEMS devices is associated with a CMOS control element of the plurality of CMOS control elements. The plurality of CMOS control elements are arranged in the two-dimensional array such that low voltage semiconductor devices are only adjacent to other low voltage semiconductor devices, high voltage PMOS semiconductor devices are only adjacent to other high voltage PMOS semiconductor devices, and high voltage NMOS semiconductor devices are only adjacent to other high voltage NMOS semiconductor devices.

Two-dimensional array of CMOS control elements

In a method for determining whether a finger is a real finger at an ultrasonic fingerprint sensor, a first image of a fingerprint pattern is captured at an ultrasonic fingerprint sensor, wherein the first image is based on ultrasonic signals corresponding to a first time of flight range. A second image of the fingerprint pattern is captured at the ultrasonic fingerprint sensor, wherein the second image is based on ultrasonic signals corresponding to a second time of flight range, the second time of flight range being delayed compared to the first time of flight range. A difference in a width of ridges of the fingerprint pattern in the first image compared to the width of ridges of the fingerprint pattern in the second image is quantified. Based on the quantification of the difference, a probability whether the finger is a real finger is determined.

Fake finger detection using ridge features

A method for generating an image is provided. The method comprises capturing a first set of image pixels by an ultrasonic sensor comprising an array of ultrasonic transducers using a first beamforming pattern, wherein the first beamforming pattern comprises a first pattern of transmit signals routed to a plurality of ultrasonic transducers of the ultrasonic sensor. The method further comprises capturing a second set of image pixels at the ultrasonic sensor using a second beamforming pattern, wherein the second beamforming pattern comprises a second pattern of transmit signals routed to the plurality of ultrasonic transducers. The second beamforming pattern is different than the first beamforming pattern. The second set of image pixels corresponds to an edge region of the ultrasonic sensor. The method additionally comprises combining the first set of image pixels and the second set of image pixels to form the image. An electronic device and a method of generating an image of a fingerprint with a fingerprint sensor are also provided.

Image generation in an electronic device using ultrasonic transducers

In a method of operating a two-dimensional array of ultrasonic transducers, a plurality of array positions comprising pluralities of ultrasonic transducers of the two-dimensional array of ultrasonic transducers is defined, the plurality of array positions each comprising a portion of ultrasonic transducers of the two dimensional array of ultrasonic transducers. For each array position of the plurality of array positions, a plurality of ultrasonic transducers associated with the respective array position are activated. The activation includes transmitting ultrasonic signals from a first group of ultrasonic transducers of the plurality of ultrasonic transducers, wherein at least some ultrasonic transducers of the first group of ultrasonic transducers are phase delayed with respect to other ultrasonic transducers of the first group of ultrasonic transducers, the first group of ultrasonic transducers for forming a focused ultrasonic beam. The activation also includes receiving reflected ultrasonic signals at a second group of ultrasonic transducers of the plurality of ultrasonic transducers.

Operating a two-dimensional array of ultrasonic transducers

A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device is provided. The PMUT includes a substrate and an edge support structure connected to the substrate. A membrane is connected to the edge support structure such that a cavity is defined between the membrane and the substrate, where the membrane is configured to allow movement at ultrasonic frequencies. The membrane includes a piezoelectric layer and first and second electrodes coupled to opposing sides of the piezoelectric layer. An interior support structure is disposed within the cavity and connected to the substrate and the membrane.

Piezoelectric micromachined ultrasonic transducer (PMUT)

A method for generating a composite image having an increased image pixel density by an array of ultrasonic transducers having a given spatial density is provided. The method comprises capturing a first set of pixels at an ultrasonic sensor using a first beamforming pattern, wherein the first beamforming pattern comprises a first pattern of ultrasonic transducers of the ultrasonic sensor. The method further comprises capturing a second set of pixels at the ultrasonic sensor using a second beamforming pattern, wherein the second beamforming pattern comprises a second pattern of ultrasonic transducers. The first beamforming pattern and the second beamforming pattern are different. Pixels of the second set of pixels correspond to positions between pixels of the first set of pixels. The method additionally comprises combining the first and second sets of pixels to form the composite image. An electronic device and a method of generating an image of a fingerprint are also provided.

An electronic device including an array of ultrasonic transducers, a temperature sensor for determining a temperature of the array of ultrasonic transducers, and a control module communicatively coupled to the array of ultrasonic devices and the temperature sensor. The control module is for receiving the temperature and for controlling operation of the array of ultrasonic transducers based at least in part on the temperature.

Sensing device with a temperature sensor

An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes semiconductor devices. The plurality of CMOS control elements each including a PMOS semiconductor device portion comprising a high voltage PMOS device and a low voltage PMOS device and an NMOS semiconductor device portion comprising a high voltage NMOS device and a low voltage NMOS device. The plurality of CMOS control elements are arranged in the two-dimensional array such that the PMOS semiconductor device portion of a CMOS control element of the plurality of CMOS control elements is only adjacent to other PMOS semiconductor device portions of adjacent CMOS control elements of the plurality of CMOS control elements, and such that the NMOS semiconductor device portion of a CMOS control element of the plurality of CMOS control elements is only adjacent to other NMOS semiconductor device portions of adjacent CMOS control elements of the plurality of CMOS control elements.

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Palo Alto, CA, United States of America

Nikhil Apte