Micron Technology Incorporated

Dow Global Technolgoies LLC

Rohm & Haas Electronic Materials LLC

Nik Mirin

Chris M Carlson

Vishwanath Bhat

Vassil N Antonov

Tsai-Yu Huang

Peter Trefonas, Iii

Dan B Millward

Phillip Dene Hustad

Xue Chen

Jong Keun Park

Adam L Olson

Kaveri Jain

William R Brown

Ho Seop Eom

Christopher Nam Lee

Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550&#xb0; C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide

Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Methods of forming patterns with a mask formed utilizing a brush layer

Constructions comprising thermally conductive stacks containing rutile-type titanium oxide

Methods of forming patterns by using a brush layer and masks

Methods of forming and utilizing rutile-type titanium oxide

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Boise, ID, United States of America

Nik Mirin