Veeco Instruments Inc.

Other

Bruker Nano Gmbh

Nihat Okulan

Ami Chand

Kevin Kjoller

Semiconductor strain gages fabricated on Silicon-on-insulator (SOI) material, and the method of making them. Force sensing elements are uniformly batch-fabricated at wafer level and singulated individually by a wire bonding method. In another method, they are singulated by plucking them off the wafer from their attachment site.

Semiconductor strain gauge and method of manufacturing same

A probe assembly for an instrument and a method of manufacture includes a substrate and a cantilever having a length that is independent of typical alignment error during fabrication. In one embodiment, the probe assembly includes a buffer section interposed between the substrate and the cantilever. The cantilever extends from the buffer section and a portion of the buffer section extends beyond an edge of the substrate. The portion of the buffer section is more stiff than the cantilever. The corresponding method of producing the probe assembly facilitates batch fabrication without compromising probe performance.

Probe for a scanning probe microscope and method of manufacture

Probes for use in a scanning probe microscope and methods of manufacturing such probes. Each probe includes a probe tip having a substantially vertical sidewall formed by an anisotropic etching process and a flared post underlying the probe tip that is formed by an etching process that is not anisotropic. A source gas comprising a bromine-containing gas and an oxygen-containing gas is used to etch the probe tip and flared post of the probe in a batch process. The probe tips may be qualified using any suitable criterion for use by a customer in an atomic force microscope without individual inspection.

Probes for use in scanning probe microscopes and methods of fabricating such probes

A characterizer for determining the shape of a probe tip for an atomic force microscope and methods of fabricating and using the characterizer. The characterizer includes a micromachined crystalline structure with opposed edges separated by a width suitable for characterizing a dimension of the probe tip. At least one of the opposed edges overhangs an undercut region of the micromachined crystalline structure by an overhang distance that is greater than one third of the width. The probe tip is scanned across the edges of the characterizer for shape determination. The characterizer is formed by serially deep reactive ion etching and anisotropic etching (100) single crystal silicon. The opposed edges may be oxidation sharpened for use in profiling an end or side of the probe tip.

Methods of fabricating structures for characterizing tip shape of scanning probe microscope probes and structures fabricated thereby

A characterizer for determining the shape of a probe tip for an atomic force microscope and methods of fabricating and using the characterizer. The characterizer includes a micromachined crystalline structure with opposed edges separated by a width suitable for characterizing a dimension of the probe tip. At least one of the opposed edges overhangs an undercut region of the micromachined crystalline structure by an overhang distance that is greater than one third of the width. The probe tip is scanned across the edges of the characterizer for shape determination. The characterizer is formed by serially deep reactive ion etching and anisotropic etching () single crystal silicon. The opposed edges may be oxidation sharpened for use in profiling a bottom surface of the probe tip.

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Santa Barbara, CA, United States of America

Nihat Okulan