Nanometrics Inc.

International Business Machines Corporation

Industrial Technology Research Institute

Accent Optical Technologies, Inc.

Nigel Peter Smith

Lewis A Binns

Christopher P Ausschnitt

Yi-Sha Ku

Jaime D Morillo

Yi Sha Ku

Deh Ming Shyu

Chun Hung Ko

Shih Chun Wang

Kevin Eduard Heidrich

An-Shun Liu

Hsin Lan Pang

Hsiu Lan Pang

Chun-hung Ko

Hsiu-Lan Pang

Chistopher P Ausschnitt

Jennifer L Morningstar

Hsui Lan Pang

A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Multilayer alignment and overlay target and measurement method

Multi layer alignment and overlay target and measurement method

In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.

Overlay measurement target

Overlay error between two layers on a substrate is measured using an image of an overlay target in an active area of a substrate. The overlay target may be active features, e.g., structures that cause the device to function as desired when manufacturing is complete. The active features may be permanent structures or non-permanent structures, such as photoresist, that are used define the permanent structures during manufacturing. The image of the overlay target is analyzed by measuring the light intensity along one or more scan lines and calculating a symmetry values for the scan lines. Using the symmetry values, the overlay error can be determined.

Determining overlay error using an in-chip overlay target

A method for designing a grating comprises steps of (a1) generating a first diffraction spectrum based on calculation values of a plurality of structural parameters, (a2) calculating a first difference value between the first diffraction spectrum and a first nominal spectrum, (a3) setting a default difference value with the first difference value and default structural parameter values with the structural parameter values, (b1) changing one of the structural parameter values to generate a second diffraction spectrum, (b2) calculating a second difference value between the second diffraction spectrum and a second nominal spectrum, and (c) comparing the default difference value and the second difference value, updating a default difference value with the smaller one, and updating the default structural parameter values with the structural parameter values corresponding to the smaller one.

Method for designing gratings

A method of measuring dimensions for an optical system to measure the critical dimension of a sample object according to this aspect of the present invention includes the steps of preparing a plurality of standard objects, selecting a predetermined focus metric algorithm, performing an analyzing process on each standard object to generate a plurality of focus metric distributions using the predetermined focus metric algorithm, analyzing the focus metric distributions to determine a target order, generating a reference relation, acquiring a measured characteristic value from the sample object, and determining the critical dimension of the sample object based on the measured characteristic value and the reference relation. Each standard object has a grating-shaped standard pattern with a predetermined pitch and line width. The focus metric algorithm is a gradient energy method, a Laplacian method, a standard deviation method, or a contrast method.

Method for measuring dimensions and optical system using the same

A system and method for efficiently and accurately determining grating profiles uses characteristic signature matching in a discrepancy enhanced library generation process. Using light scattering theory, a series of scattering signatures vs. scattering angles or wavelengths are generated based on the designed grating parameters, for example. CD, thickness and Line:Space ratio. This method selects characteristic portions of the signatures wherever their discrepancy exceeds the preset criteria and reforms a characteristic signature library for quick and accurate matching. A rigorous coupled wave theory can be used to generate a diffraction library including a plurality of simulated diffraction spectrums based on a predetermined structural parameter of the grating. The characteristic region of the plurality of simulated diffraction spectrums is determined based on if the root mean square error of the plurality of simulated diffraction spectrums is larger than a noise level of a measuring machine. The diffraction intensity of the measured diffraction spectrum is compared with that of the plurality of simulated diffraction spectrums in the characteristic region to select a match spectrum from these simulated diffraction spectrums, and the structural parameter of the grating is decided based on the match spectrum.

Scatterometry method with characteristic signatures matching

In systems and methods measure overlay error in semiconductor device manufacturing based on target image asymmetry. As a result, the advantages of using very small in-chip targets can be achieved, while their disadvantages are reduced or eliminated. Methods for determining overlay error based on measured asymmetry can be used with existing measurement tools and systems. These methods allow for improved manufacturing of semiconductor devices and similar devices formed from layers.

Methods and systems for determining overlay error based on target image symmetry

A method of determining and correcting for distortions introduced by an imaging tool. The method includes providing an imaging tool having a field of view (FOV), and creating a target pattern containing a regular array of symmetric sub-patterns having locations spanning the FOV. Using the imaging tool, the method then includes measuring relative position of the sub-pattern images at one or more target orientations, determining tool-induced sub-pattern position deviations from designed locations of the sub-patterns, and applying corrections to compensate for an orientation independent component of the sub-pattern position deviations. The target pattern may be mounted on a stage of the measurement tool, created on a mask used in the lithographic process, or created on a wafer being measured by the measuring tool.

Imaging tool calibration artifact and method

Multi-layer alignment and overlay target and measurement method

A method for inspecting a grating biochip comprises the steps of irradiating a grating biochip using a light beam, measuring a diffracted light using a photodetector, selecting a plurality of parameters of the grating biochip, and optimizing the parameters to enhance the detection sensitivity, wherein the diffracted light is generated by the light beam passing the grating biochip. The grating biochip comprises a grating structure including a semiconductor substrate, a grating positioned on the semiconductor substrate and a dielectric layer covering the grating and the semiconductor substrate. The sample of the biochip is positioned on the grating structure.

Growing community of inventors

Hsinchu, Taiwan

Nigel Peter Smith