Hunan Sanan Semiconductor Co., Ltd.

Nientze Yeh

Wenbi Cai

Cheng Liu

Boting Liu

Yuci Lin

Yutao Fang

Shuai Chen

Fuchin Chang

Ning Xu

An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x decreases and z increases along a direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.

Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same

An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device

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Xiamen, China

Nientze Yeh