Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Siemens Aktiengesellschaft

Mosel Vitelic Corporation

Promos Technology, Inc.

Nien-Yu Tsai

Wen-Ju Preet Yang

Ray C Lee

Chin-Chang Hsu

Yu-Jung Chang

Min-Yuan Tsai

Pao-Chu Chang

Lin Ming Hung

Hsien-Hsin Sean Lee

Ming-Horng Lin

A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Standard cell and semiconductor device including anchor nodes

An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Integrated circuit device and method

A method to fabricate bottle-shaped deep trench into a semiconductor substrate. After a neck profile is formed, the chlorine gas at a predetermined flow rate is added to the etching plasma gas composition, while the flow rates of the plasma gases are increased by about 30% by volume, to create an enlarged lower portion of the deep trench. Preferably, the neck portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 87:13:35 sccm. The enlarged lower portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 113&plusmn;12:17&plusmn;2:46&plusmn;5 sccm, and Cl,provided at a flow rate between 10 and 40 sccm. It was found that the width of the lower portion of the deep trench can be increased by 100% with minimum side effects such as polymer deposition in the plasma chamber, which could occur as result of substantially increased flow rate of HBr and/or NF,.

Deep trench bottle-shaped etching using Cl2 gas

A method to fabricate bottle-shaped deep trench in a semiconductor substrate which mainly involves two substitute plasma etching steps from the conventional approach. After a neck profile is formed, instead of raising the plasma gas pressure while keeping the etching composition constant, as in the conventional approach, the plasma gas pressure is first maintained the same, then decreased substantially. On the other hand, the concentrations of HBr and NF.sub.3 are increased substantially in both new steps. The first substitute plasma etching step is conducted at a pressure of 100 mtorr an RF power of about 1,000 W, a magnetic field of 65 Gauss. The plasma gas composition consists of HBr, NF.sub.3, and (He/O.sub.2) a at a ratio of about 200:20:20. The second substitute plasma etching step is conducted at plasma gas pressure of 30 mtorr, an RF power of 600 W, a magnetic field of 65 Gauss. The plasma gas composition consists of HBr, NF.sub.3, and (He/O.sub.2) a at a ratio of about 150:13:20.

Deep trench bottle-shaped etch in centura mark II NG

Growing community of inventors

Hsinchu, Taiwan

Nien-Yu Tsai