United Microelectronics Corp.

Nien-Chung Chiang

Chih-Sheng Chang

Yi-Tyng Wu

Chi-Rong Lin

Huai-Hsuan Tsai

Chun-Hsing Tung

A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50&#xb0; C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50&#xb0; C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.

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Taipei, Taiwan

Nien-Chung Chiang