Intel Corporation

Niels Zussblatt

Tahir Ghani

Biswajeet Guha

Oleg Golonzka

Leonard P Guler

William Hsu

Mohit K Haran

Reken Patel

Mohammad Hasan

Benjamin Kriegel

Jeffrey Miles Tan

Michael Harper

Gate-all-around integrated circuit structures having pre-spacer-deposition cut gates are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, and a second gate stack is over the second vertical arrangement of horizontal nanowires. An end of the second gate stack is spaced apart from an end of the first gate stack by a gap. The integrated circuit structure also includes a dielectric structure having a first portion forming a gate spacer along sidewalls of the first gate stack, a second portion forming a gate spacer along sidewalls of the second gate stack, and a third portion completely filling the gap, the third portion continuous with the first and second portions.

Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates

Growing community of inventors

Hillsboro, OR, United States of America

Niels Zussblatt