Advanced Micro Devices Corporation

Niels-Wieland Hauptmann

Christian Krueger

Rastislav Kocis

Heinz Seidel

Thomas Beck

Marek Braun

By operating an implantation tool with a source gas having a halogen fraction of 66 atomic percent or less relative to the total composition of the source gas, an in situ cleaning effect may be achieved while performing an implantation process.

Method of implanting ion species into microstructure products by concurrently cleaning the implanter

When changing a dopant species in an implantation tool, typically a clean process is performed to reduce cross-contamination, which is considered a major issue in implant cycles applied in advanced CMOS processes. Especially, the employment of an implanter previously used for heavy ions may generate increased cross-contamination when subsequently used for boron or phosphorus implants at moderate energies. A clean implant process using xenon gas may effectively reduce this cross-contamination at shorter process times compared to a conventional argon clean step.

Growing community of inventors

Moritzburg, Germany

Niels-Wieland Hauptmann