Koninklijke Philips Corporation N.V.

Nxp B.v.

Niels Kramer

Rob Mathijs Heeres

John Joseph Hug

Dmitry Pavlovich Prikhodko

Albertus Gerardus Wilhelmus Philipus Van Zuijlen

Ronald Koster

An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,to HBT,,N) connected to a power supply. A plurality of base resistors (Rb,to Rb,,N) for the output transistors (HBT,to HBT,,N) and a plurality of input capacitors (Cb,to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,to HBT,,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,to HBT,,N). The transistors (HBT,to HBT,,N) are heterojunction bipolar transistors.

RF power amplifier

A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (), a biasing circuit () biasing the power transistor; a peak detector () measuring the output voltage of the power transistor; and a comparator circuit () connected to the peak detector () and designed to reduce the base current of the power transistor () when controlled by the peak detector ().

RF power amplifier circuit

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Nijmegen, Netherlands

Niels Kramer