Anaren, Inc.

Niels Kirkeby

Michael Lugert

Tomasz M Witas

An approach to modifying bias in a circulator to prevent higher order modes that involves the use of features positioned near the ferrite material of the circulator. The ferrite bias in the perimeter of the ferrite material is modified by the adjacent features such that higher order modes cannot be sustained. The features may include scallops that create a non-uniform magnetic field towards the perimeter of the ferrite while leaving the field near-uniform in the center where the fundamental circulator mode primarily resides. Alternatively, slots may be placed in the magnetically conductive housing bottom in the region of the edge of the ferrite material to prevent higher order modes.

Circulator with modified bias to prevent higher order modes

The present invention is directed to a compact balun device that includes an unbalanced port and a set of balanced differential ports. A first set of coupled transmission line structures is coupled to the unbalanced port and one port of the set of balanced differential ports. The first set of coupled transmission line structures is characterized by at least one device parameter and a first length that is substantially equal to a quarter of a wavelength (&#x3bb;). The wavelength (&#x3bb;) corresponds to a first frequency. A second set of coupled transmission line structures is coupled to another port of the set of balanced differential ports. The second set of coupled transmission line structures is characterized by the at least one device parameter and a second length that is substantially equal to the quarter of a wavelength (&#x3bb;). The wavelength (&#x3bb;) corresponds to the first frequency. A plurality of interconnections couples the first set of coupled transmission line structures and the second set of coupled transmission line structures. The plurality of interconnections are configured such that the compact balun operates at a reduced operating frequency, the reduced operating frequency being selected from a range of frequencies by varying at least one device parameter. The range of frequencies is approximately between one-sixth of the first frequency and one-half the first frequency.

Compact balun

The present invention is directed to a coupler that includes a coupler structure including at least one first transmission line disposed on a first major surface of a coupler dielectric substrate and at least one second transmission line disposed on a second major surface of the coupler dielectric substrate. The coupler structure includes four symmetric ports such that each port of the four symmetric ports is characterized by substantially identical impedance characteristics. A first ground plane structure is coupled to the coupler structure and including a first outer dielectric material and a first conductive exterior layer disposed substantially parallel to the first major surface. A second ground plane structure is coupled to the coupler structure and including a second outer dielectric material and a second conductive exterior layer disposed substantially parallel to the second major surface. A thermal path is disposed between the coupler structure and at least one of the first conductive exterior layer or second conductive exterior layer. The thermal path is characterized by a thermal resistance substantially within a range between 15 W/mK and 50 W/mK, such that the coupler has a power handling capability of more than 800 W per square inch of heat sink interface.

Coupler device

The present invention is directed to a coupler structure that includes a first port, a second port, a third port, and a fourth port. L first transmission line layers are disposed in the structure. Each first transmission line layer includes a first transmission line conforming to a predetermined geometric configuration. The first transmission line is disposed on a first dielectric material between the first port and the second port. L is an integer. M second transmission line layers are disposed in alternating layers with the L first transmission line layers to form a total of N transmission line layers within the structure. M and N are integers and N is greater than or equal to three. Each second transmission line layer includes a second transmission line substantially conforming to the predetermined geometric configuration. The second transmission line is disposed on a second dielectric material between the third port and the fourth port. Each second transmission line is disposed in a predetermined position relative to a corresponding first transmission line within the structure.

Vertical inter-digital coupler

The present invention is directed to a balun that includes a first coupler structure having a first port of a balanced port pair and an unbalanced port. A second coupler structure includes a second port of the balanced port pair. The second coupler port structure being connected to the first coupler structure such that the second port of the balanced port pair is DC isolated from the first port of the balanced port pair without decoupling components.

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Jamesville, NY, United States of America

Niels Kirkeby